Effect of Al inclusion in HfO<sub>2</sub> on the physical and electrical properties of the dielectrics

Zhu, Wenjuan; Tamagawa, T.; Gibson, M.; Furukawa, Toshio; Ma, T.P.

doi:10.1109/led.2002.805000

Cited by 279 publications

(182 citation statements)

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“…6,7 It is also expected that Al addition will enlarge the band gap of HfO 2 . 8 Although numerous papers have appeared in the past two years addressing the physical/electrical properties of hafnium aluminate as a gate dielectric, [9][10][11][12] the basic microstructure and electronic structure of these amorphous materials remain unclear.…”

Section: Introductionmentioning

confidence: 99%

Effect of Al addition on the microstructure and electronic structure of HfO2 film

Wang

Egerton

et al. 2007

Journal of Applied Physics

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We have investigated the microstructures and electronic structures of a series of hafnium aluminate ͑HfAlO͒ films with Al concentration ranging from 0% to 100%. When the films evolve from pure HfO 2 to pure Al 2 O 3 by increasing the aluminum content, we find changes in their radial distribution functions, which disclose the short-range order of the materials, despite the amorphous nature of all films. The HfAlO films ͑with Al/ Hf ratio ranging from 0.25 to 5.8͒ appear to be a single glassy phase of Hf, Al, and O, instead of simple mixtures of HfO 2 and Al 2 O 3 . The Hf ͑Al͒-O, Hf ͑Al͒-Al, and Hf-Hf bonds are observed to be insensitive to the amount of Al in the film, except when the Al concentration is large ͑Al/ Hfϳ 5.8͒, in which case the bonding is similar to that in pure Al 2 O 3 . Although the local symmetry of Hf in amorphous HfO 2 is suggested by the electron energy-loss spectrum taken at an oxygen K edge, it is largely disrupted when Al is introduced. The valence electron energy-loss spectroscopy reveals three distinct evolving features as the Al content increases, which we discuss in terms of the electronic structure of HfO 2 .

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Section: Introductionmentioning

confidence: 99%

Effect of Al addition on the microstructure and electronic structure of HfO2 film

Wang

Egerton

et al. 2007

Journal of Applied Physics

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“…3(b) support this interpretation. After IB irradiation, a decrease in intensity and peak shifting toward a higher binding energy of the La 3d peak was observed [20,21]. The IB incident energy also affects the breaking of La-O bonds.…”

Section: Resultsmentioning

confidence: 99%

Solution-Derived Hafnium Lanthanum Oxide Films Prepared Using Ion-Beam Irradiation and Their Applications as Alignment Layers for Twisted-Nematic Liquid Crystal Displays

Oh¹

2016

Transactions on Electrical and Electronic Materials

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We present the alignment characteristics of LC (liquid crystal) molecules on solution-derived HLO (hafnium lanthanum oxide) films fabricated using IB (ion-beam) irradiation. We then demonstrated that LC molecules can be homogeneously and uniformly aligned on the HLO film irradiated at an IB incident energy of 1.2 keV. Physicochemical analysis methods such as atomic force microscopy and X-ray photoelectron spectroscopy were used to verify the LC alignment mechanism on the IB-irradiated HLO film. In addition, the electro-optical performance of a TN (twisted-nematic) cell fabricated using the IB-irradiated HLO film exhibited characteristics superior to those of the conventional TN cell fabricated using a rubbed polyimide layer.

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“…Zhu et al [39] have shown that Al inclusion in HfO 2 significantly increases the crystallization temperature. At an Al content of 31.7%, the crystallization temperature is about 400-500 o C higher than that without Al.…”

Section: Doping Of Hf-based High-k Oxidesmentioning

confidence: 99%

Hafnium-based High-k Gate Dielectrics

Huang¹,

Yang²,

Chu³

2010

Advances in Solid State Circuit Technologies

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Effect of Al inclusion in HfO₂ on the physical and electrical properties of the dielectrics

Cited by 279 publications

References 10 publications

Effect of Al addition on the microstructure and electronic structure of HfO2 film

Effect of Al addition on the microstructure and electronic structure of HfO2 film

Solution-Derived Hafnium Lanthanum Oxide Films Prepared Using Ion-Beam Irradiation and Their Applications as Alignment Layers for Twisted-Nematic Liquid Crystal Displays

Hafnium-based High-k Gate Dielectrics

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Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics

Cited by 279 publications

References 10 publications

Effect of Al addition on the microstructure and electronic structure of HfO2 film

Effect of Al addition on the microstructure and electronic structure of HfO2 film

Solution-Derived Hafnium Lanthanum Oxide Films Prepared Using Ion-Beam Irradiation and Their Applications as Alignment Layers for Twisted-Nematic Liquid Crystal Displays

Hafnium-based High-k Gate Dielectrics

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Effect of Al inclusion in HfO₂ on the physical and electrical properties of the dielectrics