2018
DOI: 10.1007/s10853-018-2420-3
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Effect of Ag doping on structural, optical and electrical properties of antimony sulfide thin films

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Cited by 36 publications
(14 citation statements)
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“…S8, Supporting Information). This slow decay could be associated with the presence of charge trap centers and other defect states in composites, as already found in previous reports [67][68][69]. The photoresponse has not significant difference during at least 10 cycles, revealing the excellent stability of the selenide composites with internal heterojunctions.…”
Section: Photo-electro-chemical (Pec) Performancesupporting
confidence: 82%
See 1 more Smart Citation
“…S8, Supporting Information). This slow decay could be associated with the presence of charge trap centers and other defect states in composites, as already found in previous reports [67][68][69]. The photoresponse has not significant difference during at least 10 cycles, revealing the excellent stability of the selenide composites with internal heterojunctions.…”
Section: Photo-electro-chemical (Pec) Performancesupporting
confidence: 82%
“…The speed of rise and fall for photocurrent is a good indicator of the photosensitivity for a material. Moreover, the photosensitivity (Sph) of Sb2Se3 and composites was calculated by the following formula: Sph = (IL -ID)/ID = (Jph -Jd)/Jd [67], where IL, ID, Jph, and Jd represent illuminated current, dark current, photocurrent density, J o u r n a l P r e -p r o o f and dark current density, respectively. The Sph values are 0.049, 1.638, 2.102, 2.000, and 1.870 for pure Sb2Se3, SN-2.5%, SN-5%, SN-10%, and SN-15% samples, respectively.…”
Section: Photo-electro-chemical (Pec) Performancementioning
confidence: 99%
“…1) showed a broad signal at 300 cm −1 known from metastibnite. 59 As the main signals of antimony sulfide, amorphous and crystalline are below 400 cm −1 Raman instead of IR spectroscopy was chosen for sample characterization. The Raman spectrum of the solid obtained from solutions of Sb 2 S 3 in [P 66614 ]Cl by precipitation with EtOH (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…A wide range of doping elements and techniques have been experimentally utilized on Sb 2 S 3 semiconductors for use in thin films and solar cells in recent years. [ 25,48–50 ] In addition, Cai et al. [ 51 ] used first‐principle calculations to investigate the origin of doping effects on the PV properties of Sb 2 S 3 solar cells, for which various types of extrinsic dopants such as C, Zn, Sn, Bi, Ti, Pb, and Cl have been considered.…”
Section: Introductionmentioning
confidence: 99%
“…A wide range of doping elements and techniques have been experimentally utilized on Sb 2 S 3 semiconductors for use in thin films and solar cells in recent years. [25,[48][49][50] In addition, Cai et al [51] used first-principle calculations to investigate the origin of doping effects on the PV properties of Sb 2 S 3 solar cells, for which various types of extrinsic dopants such as C, Zn, Sn, Bi, Ti, Pb, and Cl have been considered. Although the research progress of this attractive field is rapidly expanding, no comprehensive review detailing the doping strategies of Sb 2 S 3 solar cells and thin films is available to date.…”
Section: Introductionmentioning
confidence: 99%