2010
DOI: 10.1021/jz1007559
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Effect of Adsorbed Donor and Acceptor Molecules on Electron Stimulated Desorption: O2/TiO2(110)

Abstract: The role of band bending on the efficiency of charge transfer across the TiO 2 (110) single crystal surface has been measured in ultrahigh vacuum, in the absence of a wide range of surface site inhomogeneities, surface impurities and solvent effects, and particle size effects. The adsorption of the Cl 2 (electron acceptor) molecule and the O 2 (electron acceptor) molecule have been found to enhance hole transport from TiO 2 to 18 O 2 molecules adsorbed on oxygen vacancy sites, increasing the rate of electron s… Show more

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Cited by 75 publications
(118 citation statements)
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“…The band bending induced by the adsorbed (O2) − species is determined from core-level peak shifts in X-ray photoelectron spectroscopy (XPS). We discuss our results with respect to previous work on the prototypical rutile TiO2 (110) surface (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24).…”
mentioning
confidence: 55%
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“…The band bending induced by the adsorbed (O2) − species is determined from core-level peak shifts in X-ray photoelectron spectroscopy (XPS). We discuss our results with respect to previous work on the prototypical rutile TiO2 (110) surface (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24).…”
mentioning
confidence: 55%
“…The adsorption of O2 has been studied in detail on the prototypical rutile (110) surface (11), and it is well accepted that an electron transfer is a prerequisite for O2 chemisorption. This was first proved by integral techniques, mainly a combination of TPD, photodesorption, and electron-stimulated desorption (12,(14)(15)(16)(17)(18)(19). The excess electrons on the rutile (110) surface are mainly provided by surface oxygen vacancies (22,23,44), although subsurface Ti interstitials also play a role (21).…”
Section: Discussionmentioning
confidence: 99%
“…As shown in Figure 1.1, a charged metal plate was hypothesized to induce charges in the semiconducting material and therefore increase the conductivity. 11 This scheme, however, did not work [12][13] and a model was proposed by John Bardeen to explain the independence of the work function to the position of the Fermi level in the bulk of the semiconductor. 14 Surface states were proposed to exist at the free surface of the semiconductor and these states could be charged in the absence of an external field or metal contact.…”
Section: Statesmentioning
confidence: 99%
“…11,16 The behavior of O 2 chemisorbed on TiO 2 (110) is also well studied. 5,7,11,[16][17][18][19][20][21][22] It has been found, both experimentally 5,7,11,[16][17][18][19][20][21] and theoretically, 22 that the electronic desorption of O 2 , originally adsorbed on BBO oxygen vacancy defect sites, is caused by holes produced either by UV excitation or by holes produced by 100 eV electron impact. The production of holes in TiO 2 may be accurately monitored by measuring the yield of desorbing O 2 molecules.…”
mentioning
confidence: 99%