1993
DOI: 10.1143/jjap.32.2043
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Effect of Additions on Conduction Properties of ZnO Varistors

Abstract: In this paper, several substitutive and defect reactions have been analyzed to describe the conduction properties in ZnO varistors. The composition of ZnO varistors with added Co and Mn ions of high valence, i.e., Co3+ and Mn4+, was deduced to result in higher donor concentration, trap density, barrier height and leakage current, but a lower nonlinearity coefficient in comparison with that of ZnO varistors with added Co and Mn ions of low valence, i.e., Co2+ and Mn2+. The capacitance-voltage (C-V) and current-… Show more

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Cited by 8 publications
(2 citation statements)
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“…Fortunately, its magnitude is approximate to the value of ε h as the optical permittivity of ZnO is only 8. In ZnO grains, almost all of Co exists in the form of Co 2+ [35], which substitutes Zn 2+ with tetrahedral coordination [14]. It forms a deep level about 1.9 eV below the conduction band [15], which hardly changes the concentration of free electrons.…”
Section: Effects Of Intrinsic Defectsmentioning
confidence: 99%
“…Fortunately, its magnitude is approximate to the value of ε h as the optical permittivity of ZnO is only 8. In ZnO grains, almost all of Co exists in the form of Co 2+ [35], which substitutes Zn 2+ with tetrahedral coordination [14]. It forms a deep level about 1.9 eV below the conduction band [15], which hardly changes the concentration of free electrons.…”
Section: Effects Of Intrinsic Defectsmentioning
confidence: 99%
“…Experimentalmente los más eficaces a la hora de obtener buenas propiedades no lineales son manganeso y cobalto en su estado divalente, aunque su mecanismo de funcionamiento tampoco está muy claro todavía (43)(44)(45). Níquel, cromo, metales del periodo V como itrio y niobio, o incluso metales alcalinos, también son habituales en las composiciones de varistores para favorecer la adsorción de oxígeno en la interfase (13,46,47). Particularmente los óxidos de níquel (II) y de cromo (III), y otros como el óxido de aluminio (III) o el óxido de plata (I), también son empleados porque aumentan la estabilidad del dispositivo frente a la degradación eléctrica, impidiendo no sólo la difusión del oxígeno fuera del material, sino también la migración de iones cinc intersticiales a la zona espacial de carga que de esta forma podrían recombinarse con los estados de interfase y rebajar con ello la altura de la barrera de potencial (48,49).…”
Section: Papel De Los Dopantes: Sistema Base Zno-bi 2 O 3 -Sb 2 Ounclassified