Effect of addition of amino acids with hydrophilic side chains to low-concentration H3PO4 for improvement of Si3N4 etching kinetics and oxide regrowth phenomena on multi-layered Si3N4/SiO2 structures

Park, Taegun; Kim, T. G.; Han, Jongwon; Lim, Sangwoo

doi:10.1016/j.apsusc.2023.158118

Cited by 1 publication

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“…Silicic acid is mostly used by driving the etching reaction (eq ) backward, following Le Chatelier’s principle. ,,− SiO 2 + H 2 O ↔ Si false( normalOH false) 4 Nevertheless, the silicic acid is also a byproduct of Si 3 N 4 etching, which results in SiO 2 redeposition. ,,,− Thus, the uncontrolled silicic acid concentration readily leads to the regrowth of SiO 2 layers, consequently affecting the following processes. Recently, only a few studies have provided evidence suggesting the promising potential for additives inhibiting SiO 2 etching in the concentrated PA solutions. , Therefore, further research focusing on the application and mechanistic analysis of inhibitors compatible with the hot-concentrated PA etching solution for SiO 2 etching is required.…”

Section: Introductionmentioning

confidence: 99%

Study on the SiO₂ Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

Zhou,

Han,

et al. 2024

ACS Appl. Electron. Mater.

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The SiO 2 layers, as the dielectric in the multistack storage cells of 3D NAND, are detrimentally dissolved by phosphoric acid (PA) during the selective Si 3 N 4 etching. The thinning of SiO 2 layers leads to the failure of subsequent processes; thus, an etching inhibitor for SiO 2 is crucial for 3D NAND fabrication. However, most inhibitors are currently limited to neutral or alkaline solutions. In this work, the γ-ureidopropyltriethoxysilane (UPTES), compatible with a hot-concentrated PA solution, was applied to the wet-etching process for the first time and exhibited an inhibitory effect on SiO 2 etching by retarding the etch rate over 60% without affecting the Si 3 N 4 etching. The saturation adsorption of UPTES on the SiO 2 substrate is confirmed to occur around the critical concentration, according to the Langmuir−Freundlich adsorption isotherm. The adsorption behavior of UPTES exhibits a reliance on its concentration. Around the critical concentration, the UPTES molecules chemisorb on the SiO 2 surface by Si−O−Si covalent bonds to form ordered UPTESsiloxane layers, avoiding contact between SiO 2 and the etchant; whereas oversaturated UPTES polymers physisorb not only on SiO 2 but also on Si 3 N 4 , impeding the Si 3 N 4 etching. This work contributes to a step forward in the effective wet-etching process in highdensity 3D NAND fabrication.

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Section: Introductionmentioning

confidence: 99%

Study on the SiO₂ Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

Zhou,

Han,

et al. 2024

ACS Appl. Electron. Mater.

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Effect of addition of amino acids with hydrophilic side chains to low-concentration H3PO4 for improvement of Si3N4 etching kinetics and oxide regrowth phenomena on multi-layered Si3N4/SiO2 structures

Cited by 1 publication

References 39 publications

Study on the SiO₂ Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

Study on the SiO₂ Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

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Effect of addition of amino acids with hydrophilic side chains to low-concentration H3PO4 for improvement of Si3N4 etching kinetics and oxide regrowth phenomena on multi-layered Si3N4/SiO2 structures

Cited by 1 publication

References 39 publications

Study on the SiO2 Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

Study on the SiO2 Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

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Study on the SiO₂ Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

Study on the SiO₂ Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication