Effect of ACRT rotation parameters on Bridgman grown CdxHg1−xTe crystals

Coates, W.G.; Capper, P.; Jones, C. L.; Gosney, J; Ard, C. K.; Kenworthy, I.; Clark, Andrew

doi:10.1016/0022-0248(89)90130-9

Cited by 42 publications

(13 citation statements)

References 9 publications

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“…This means that a macroscopically smooth interface changes to a cellular substructure if the actual temperature at some point in front of the interface becomes lower than the equilibrium temperature of the actual concentration of the species in the solvent at just this position. Other authors dealing with crystal growth with ACRT [6][7][8][9][10][11][12] have not given any basic explanation for the reasons why forced convection can increase the maximum growth rate limit. This will be attempted in the following paragraph.…”

Section: Theorymentioning

confidence: 99%

“…This technique was first used by Scheel [6] to grow crystals of garnets from high-temperature solutions. Further studies have been on the application of ACRT to THM growth of CdTe crystals [7] and to Bridgman growth of Hg t _xCdxTe alloys [8][9][10][11][12]. Whereas there has been a patent on this subject [13], this is the first report in the open literature on the THM crystal growth of Hg i_,Cd,Te using ACRT.…”

Section: Introductionmentioning

confidence: 99%

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Growth of Hg1−xCdxTe single crystals by travelling heater method under accelerated crucible rotation conditions

Bloedner

Gille

1993

Journal of Crystal Growth

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The accelerated crucible r9tation technique (ACRT) has been applied to the THM growth of Hg I _xCdxTe crystals to grow the crystals at a higher rate. These higher growth rates, which should be achieved by extending the regions of convectional stirring towards the interfaces, have been used in an attempt to explain the results in terms of simple constitutional supercooling arguments. Some different ACRT cycles which fulfil simple hydrodynamic and geometric criteria have been studied. The grown crystals were investigated with respect to their metallurgical homogeneity and their structural perfection. These properties have not been degraded by increasing the growth rate fi'om 1.5 to 8.5 mm per day.

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Section: Theorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Growth of Hg1−xCdxTe single crystals by travelling heater method under accelerated crucible rotation conditions

Bloedner

Gille

1993

Journal of Crystal Growth

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“…A. Yeckel and J. J. Derby [54] used continuum crystal growth models to numerically simulated the ACRT applied to the vertical solidification system, and sidewall instability was shown in their results and identified as a Taylor-Görtler boundary layer instability [82]. It was shown that changing of acceleration in the rotation cycle can dramatically affect the radial and axial segregation in crystal growth system [83]. The rotation, acceleration, and deceleration lead to complicated turbulent fluid structure, such as boundary layer instabilities mentioned above, and the theoretical analyses of turbulence in crystal growth system is very limited.…”

Section: Applications Of Continuum Crystal Growth Modelsmentioning

confidence: 99%

“…Accelerated crucible rotation technique (ACRT) [16,17,[77][78][79][80] has been used in crystal growth for many years; the purpose of acceleration being to maximize convective flow by generating Ekman boundary layers at solid surfaces [81]. A series of experimental studies of ACRT has been conducted by Caper and coworkers [77][78][79][80], and they observed Ekman flow and a sidewall instability, which is identified as a Couette instability.…”

Section: Applications Of Continuum Crystal Growth Modelsmentioning

confidence: 99%

“…A series of experimental studies of ACRT has been conducted by Caper and coworkers [77][78][79][80], and they observed Ekman flow and a sidewall instability, which is identified as a Couette instability. A. Yeckel and J. J. Derby [54] used continuum crystal growth models to numerically simulated the ACRT applied to the vertical solidification system, and sidewall instability was shown in their results and identified as a Taylor-Görtler boundary layer instability [82].…”

Section: Applications Of Continuum Crystal Growth Modelsmentioning

confidence: 99%

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Simulating Interface Growth and Defect Generation in CZT – Simulation State of the Art and Known Gaps

Henager¹,

Gao²,

Hu³

et al. 2012

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Macro‐ and microsegregation of Zn in bridgman‐grown CdZnTe

Capper¹,

Harris²,

O’Keefe³

et al. 1995

Adv Material for Optics Elec

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One of the remaining problems in the use of CdZnTe material as substrates in liquid phase epitaxy (LPE) of Cd.Hg,-,Te (CMT) layers is that of variation in lattice matching, i.e. Zn content, across substrates. This will become increasingly important in the future as larger focal plane arrays of infrared detectors are required. The basic Bridgman growth process for CdTe/Cdo.,Zno,o,Te has been extended by applying the accelerated crucible rotation technique (ACRT). A marked reduction in axial Zn segregation is seen in 50 mm diameter ACRT material, but this effect is smaller in the case of 75 mm diameter crystals. Radial variations in Zn content are small in both sizes of crystal, demonstrating the benefits obtained from ACRT stirring. Both macro-and microsegregation effects have been studied in these crystals in an attempt to understand the growth mechanism. Zinc distributions have been assessed by near-infrared transmission, X-ray lattice parameter measurements, atomic absorption spectrometry (AAS) and Auger electron spectrometry (AES). The last technique was used for the microsegregation studies, while AAS provides the absolute calibration for Zn content. Comparisons with segregation behaviour found in the literature will be given. It will be shown that the low temperature gradient and low growth rate lead to a degree of supercooling in the first-to-freeze region and this leads to significant Zn segregation in both radial and axial directions. As the crystals reach full diameter, the radial variation is decreased, presumably by the action of the ACRT, and axial segregation is also reduced.

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Effect of ACRT rotation parameters on Bridgman grown CdxHg1−xTe crystals

Cited by 42 publications

References 9 publications

Growth of Hg1−xCdxTe single crystals by travelling heater method under accelerated crucible rotation conditions

Growth of Hg1−xCdxTe single crystals by travelling heater method under accelerated crucible rotation conditions

Simulating Interface Growth and Defect Generation in CZT – Simulation State of the Art and Known Gaps

Macro‐ and microsegregation of Zn in bridgman‐grown CdZnTe

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