Effect of absorber thickness on image shortening in x-ray lithography

Maldonado, Juan R.; DellaGuardia, Ronald; Hector, Scott Daniel; McCord, Mark A.; Liebmann, Lars W.; Oertel, H.

doi:10.1116/1.588329

Cited by 6 publications

(6 citation statements)

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“…10 was not reduced with resist changes and was only partially reduced with APEX-E resist process changes. This agreement allows reasonably accurate prediction of exposure latitude, gap latitude, and absorber thickness latitude for one-dimensional 75-125 nm features exposed at Ͻ25 m gap.…”

Section: Discussionmentioning

confidence: 84%

“…One recent study by Maldonado et al 10 addressed image shortening in two-dimensional patterning. One recent study by Maldonado et al 10 addressed image shortening in two-dimensional patterning.…”

Section: Issues In 2d Patterningmentioning

confidence: 99%

“…For у150 nm features at 25 m gap, line end shortening was measured for the same patterns used in the Maldonado article 10 Although a fully three-dimensional model of resist dissolution was not available to the authors, a three-dimensional model of x-ray image formation developed at the University of Wisconsin was used to qualitatively determine whether the line end shortening effect resulted in large part from diffraction. Figure 6͑a͒ shows a contour plot of aerial image FIG.…”

Section: Issues In 2d Patterningmentioning

confidence: 99%

“…Figure 6͑a͒ shows a contour plot of aerial image FIG. 10. Contours of aerial image intensity for the 150 nm ground-rule feature outlined in white exposed at 25 m gap with a 350 nm Au absorber.…”

Section: Issues In 2d Patterningmentioning

confidence: 99%

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Extendibility of x-ray lithography to ⩽130 nm ground rules in complex integrated circuit patterns

Hector

Chu

Thompson

et al. 1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested in X-ray mask fabrication technology for 0.1 μm very large scale integrated circuits Extendibility of synchrotron radiation lithography to the sub-100 nm region Previous experimental and theoretical evidence indicates that x-ray lithography can be used to pattern р180 nm features. In order to be used in manufacturing, x-ray lithography of complex integrated circuit patterns ͑i.e., dense two-dimensional patterns͒ needs to be demonstrated with a practical proximity gap. However, no large body of experimental evidence exists for the extendibility of x-ray lithography for complex patterns with ground rules of р130 nm at gaps of 10-20 m. Simulations of image formation and resist dissolution are shown to have good agreement with experimental results. These simulations are then used to predict exposure latitude and gap latitude for printing one-dimensional 75-125 nm patterns at 10-15 m gaps. Simulations indicate that at least Ϯ10% exposure dose latitude will exist for simple patterns at these gaps, but significant nested-to-isolated linewidth bias will exist. Gaps must be controlled to Ϯ1 m for Ϯ10% dose latitude. More complex two-dimensional patterns have been shown to exhibit line end shortening ͓J. Maldonado, R. Dellaguardia, S. Hector, M. McCord, and L. Liebmann, J. Vac. Sci. Technol. B 13, 3094 ͑1995͔͒ that simulations qualitatively indicate a rise in part due to image formation. Simple serifs on line ends may be needed to reduce line end shortening.

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Section: Discussionmentioning

confidence: 84%

Section: Issues In 2d Patterningmentioning

confidence: 99%

Section: Issues In 2d Patterningmentioning

confidence: 99%

Section: Issues In 2d Patterningmentioning

confidence: 99%

See 2 more Smart Citations

Extendibility of x-ray lithography to ⩽130 nm ground rules in complex integrated circuit patterns

Hector

Chu

Thompson

et al. 1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…In order to be cost effective for manufacturing, extendibility of x-ray lithography to Ͻ130 nm ground rule patterning is essential. In this study, experimental measurements of 75-125 nm linewidth patterning at [11][12][13][14][15][16][17][18][19][20][21][22].5 m gaps are presented. Because the mask is not in contact with the resist on the wafer, diffraction in the gap between the mask and wafer degrades the image of the absorber pattern.…”

Section: Introductionmentioning

confidence: 99%

X-ray lithography for ⩽100 nm ground rules in complex patterns

Hector

Pol

Krasnoperova

et al. 1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Complex patterns with 75-125 nm feature sizes exposed with x-ray lithography are shown. Lithographic results for 75-125 nm lines with varying pitch are compared to simulations of image formation and resist dissolution, showing good qualitative agreement. Exposure dose latitude, nested-to-isolated print bias, image shortening, linewidth change with gap, and linearity of printed linewidth versus mask linewidth are quantified for 11-22.5 m gaps. Critical dimension control error budgets for resist linewidth uniformity are determined for logic patterns at 75 and 100 nm ground rules. Image shortening is quantified for 75-125 nm ground rule static random access memory-like patterns, indicating hammerheads added to line ends reduce shortening to acceptable levels for у100 nm ground rules at р17.5 m gaps. With tight gap control and tight mask linewidth control, 100 nm ground rule complex patterns can be printed with good latitude using x-ray lithography.

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