2020
DOI: 10.1016/j.jallcom.2019.153284
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Effect of abnormal grain growth on thermoelectric properties of hot-pressed Bi0.5Sb1.5Te3 alloys

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Cited by 16 publications
(6 citation statements)
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“…34 As a result, the zT can be further boosted along ab in polycrystalline and textured materials. Within polycrystalline materials, the presence of small but mixed-size grains has been demonstrated beneficial to promote low electrical resistivity channels but effective scattering of phonons with different mean free path, while maintaining a similar S. Such mixed-grain size morphology lead to Bi 0.5 Sb 1.5 Te 3 samples with high zT of 1.4 at 340 K. 35 Moreover, compared to single crystals, polycrystalline materials display better mechanical properties. 20 Many researchers have focused their effort on different techniques to obtain polycrystalline and textured BT materials.…”
Section: Anisotropy In Crystalline Thermoelectric Materials Example Of Bismuth Telluridementioning
confidence: 99%
“…34 As a result, the zT can be further boosted along ab in polycrystalline and textured materials. Within polycrystalline materials, the presence of small but mixed-size grains has been demonstrated beneficial to promote low electrical resistivity channels but effective scattering of phonons with different mean free path, while maintaining a similar S. Such mixed-grain size morphology lead to Bi 0.5 Sb 1.5 Te 3 samples with high zT of 1.4 at 340 K. 35 Moreover, compared to single crystals, polycrystalline materials display better mechanical properties. 20 Many researchers have focused their effort on different techniques to obtain polycrystalline and textured BT materials.…”
Section: Anisotropy In Crystalline Thermoelectric Materials Example Of Bismuth Telluridementioning
confidence: 99%
“…[16][17][18] Te is a p-type semiconductor with a band gap of around 0.35 eV at room temperature. To date, many Te-based high-performance thermoelectric materials have been reported, for example, Bi 2 Te 3 -based alloys, [19][20][21][22] PbTe, 23 GeTe, 24 SnTe, 25 etc. Besides, elemental Te is also a promising thermoelectric material with the ZT reaching unity at ∼600 K. 26 The crystalline structure of Te is highly anisotropic, which gives it a strong tendency to grow along the c axis and form 1D nanostructures.…”
Section: Introductionmentioning
confidence: 99%
“…Laser printing is emerging as an alternative manufacturing route for thermoelectrics. Compared to traditional bulk TE manufacturing techniques, such as spark plasma sintering (SPS) [23][24][25][26][27] and hot pressing, [28] laser enables to access new mor-phologies and versatile geometries. Shi et al used selective laser sintering (SLS) to print porous Bi 0.5 Sb 1.5 Te 3 bulk parts (ingots) with a maximum ZT of about 1.29 at 323 K. [29] Compared to SLS, laser powder bed fusion (LPBF, also known as selective laser melting, SLM) features full melting and rapid cooling.…”
Section: Introductionmentioning
confidence: 99%
“…Laser printing is emerging as an alternative manufacturing route for thermoelectrics. Compared to traditional bulk TE manufacturing techniques, such as spark plasma sintering (SPS) [ 23–27 ] and hot pressing, [ 28 ] laser enables to access new morphologies and versatile geometries. Shi et al.…”
Section: Introductionmentioning
confidence: 99%