Effect of a-SiCxNy:H Encapsulation on the Stability and Photoluminescence Property of CsPbBr3 Quantum Dots

Abstract

The effect of a-SiCxNy:H encapsulation layers, which are prepared using the very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique with SiH4, CH4, and NH3 as the precursors, on the stability and photoluminescence of CsPbBr3 quantum dots (QDs) were investigated in this study. The results show that a-SiCxNy:H encapsulation layers containing a high N content of approximately 50% cause severe PL degradation of CsPbBr3 QDs. However, by reducing the N content in the a-SiCxNy:H layer, the PL degradation of CsPbBr3 QDs can be significantly minimized. As the N content decreases from around 50% to 26%, the dominant phase in the a-SiCxNy:H layer changes from SiNx to SiCxNy. This transition preserves the inherent PL characteristics of CsPbBr3 QDs, while also providing them with long-term stability when exposed to air, high temperatures (205 °C), and UV illumination for over 600 days. This method provided an effective and practical approach to enhance the stability and PL characteristics of CsPbBr3 QD thin films, thus holding potential for future developments in optoelectronic devices.

Synthesis and Improved Photoluminescence of SnF2-Derived CsSnCl3-SnF2:Mn2+ Perovskites via Rapid Thermal Treatment

“…where I 0 represents the background level; τ 1 , τ 2, and τ 3 represent the lifetime of each exponential decay component, and A 1 , A 2 , and A 3 denote the corresponding amplitudes, respectively. Therefore, the intensity-weighted average PL lifetimes are determined using [24]. As demonstrated in Figure 3c, the blue emission exhibits a fast decay dynamic with a lifetime of 4.93 ns, while the red emission displays a slow decay behavior with a lifetime of 0.16 ms, which is five orders of magnitude longer than that of the blue emission.…”

Editorial for the Special Issue “Amorphous and Nanocrystalline Semiconductors: Selected Papers from ICANS 29”

“…This includes topics such as Si-based, oxide, perovskite, 2D thin films and nanostructures, device applications for TFTs, solar cells, and LEDs, as well as memory devices and emerging flexible electronics and neuromorphic applications. For example, new fabrication technologies of amorphous and nanocrystalline thin films, electronic and optical characteristics, and device applications are presented and discussed in [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ], including theoretical work in an ab initio study [ 9 ], controllable growth and formation of Si nanowires [ 1 ], nanocrystals [ 2 ], and quantum dots [ 3 , 4 ]. There are also several papers that cover emerging memory devices.…”

“…There are also several papers that cover emerging memory devices. These include phase change memory [ 5 , 6 , 7 , 8 , 9 ] based on amorphous chalcogenide thin films and memristors based on transition metal oxides acting as an artificial synapse [ 10 , 11 , 12 ]; the improvement of electro-luminescence (EL) efficiency Er-doped oxide thin films [ 13 , 14 , 15 ]; 2D semiconductor thin films and perovskite for solar cells and aqueous Zn-air battery [ 16 , 17 , 18 , 19 ]; and flexible electronic materials for integrated strain sensors [ 20 , 21 ]. We anticipate that this Special Issue should interest a broad audience in these related fields.…”

“…The strong photon emissions were found under both ultraviolet and visible radiation, which could serve as a potential application for skin treatment. On the other hand, an intriguing phenomenon was discovered by Huang’s group [ 15 ]. The PL properties and stability of CsPbBr 3 QDs films can be enhanced by an a-SiC x N y :H encapsulation layer prepared using a very-high-frequency PECVD technique.…”