Effect of a deprotection group on acrylic photoresist

ABSTRACT:The structure and thermal properties of polyamide-1010 (PA1010), treated at 250°C for 30 min under pressures of 0.7-2.5 GPa, were studied with wide-angle X-ray diffraction (WAXD), infrared (IR), differential scanning calorimetry (DSC), and thermogravimetric analysis (TGA). Crystals were formed when the pressures were less than 1.0 GPa or greater than 1.2 GPa. With increasing pressure, the intensity of the diffraction peak at approximately 24°was enhanced, whereas the peak at approximately 20°was depressed. The triclinic crystal structure of PA1010 was preserved. The highest melting temperature of the crystals obtained in this work was 208°C for PA1010 treated at 1.5 GPa. Crosslinking occurred under pressures of 1.0 -1.2 GPa. Only a broad diffraction peak centered at approximately 20°was observed on WAXD patterns, and no melting and crystallization peaks were found on DSC curves. IR spectra of crosslinked PA1010 showed a remarkable absorption band at 1370 cm Ϫ1 . The NOH stretching vibration band at 3305 cm Ϫ1 was weakened. Crystallized PA1010 had a higher thermal stability than crosslinked PA1010, as indicated on TGA curves by a higher onset temperature of decomposition.

Section: Analysis Of the Thermal Propertiesmentioning

confidence: 99%

Crystallization and crosslinking of polyamide‐1010 under elevated pressure

Yang

Dong

Luan

et al. 2002

“…The MAA content was kept at 20 mol % for all copolymers because it was previously reported to have optimum sensitivity to polarity change. 4,5,[7][8][9][10] The copolymers were prepared through free-radical polymerization with the same amount of AIBN initiator. Therefore, the molecular weights of the copolymers are similar in spite of the composition variation.…”

Section: Characteristics Of Photoresistsmentioning

confidence: 99%

“…A diluted developer was used and proved to work well in our previous investigation. 7 The contrast of the resists was measured from the slope of the remaining film thickness after being developed by 0.065N TMAH developer for 10 s at the various exposure doses of 248-nm light source. The sensitivity E 0 was measured as the minimum energy required for the exposed film beginning to be dissolved in the developer, the results of which are listed in Table I.…”

Section: Lithographic Performancementioning

confidence: 99%

Study of the synthesis and characterization of methacrylate photoresists

Lin

Chou

et al. 2001

Self Cite

Polymethacrylate copolymers used as single-layer resists (SLR) were investigated in this study. A photoacid generator (PAG) in the chemically amplified resist (CAR) can generate a Brönsted proton after light stimulation, which can catalyze the deprotection reaction of t-butyl methacrylate during the postexposure baking (PEB) process. Excimer lasers (KrF and ArF) were used as light source to evaluate the lithographic performance of resists. The hydrophobic property of the resist changed to hydrophilic property after the deprotection reaction by light exposure, which made the exposed resist soluble in the base developer. The deprotection reaction was analyzed by using FTIR and the reaction kinetics of the resist is discussed. The effects of the t-butyl methacrylate and the isobornyl methacrylate in the resists on the light sensitivity, contrast, reactive ion etching (RIE) resistance, and lithographic performance were systematically investigated.

“…Positive photoresists are materials that become soluble in solvent or water‐based developing solutions when exposed to optical radiation. Many articles describing various mechanisms for positive‐tone photoresists have been published 1–7. Particularly, the t ‐butoxy carbonyl ( t ‐BOC) deprotection mechanism offering a high sensitivity and contrast by acid‐catalyzed deprotection has attracted interest in the development of high‐performance photoresist 8–9…”

Section: Introductionmentioning

confidence: 99%

Photocurable positive photoresist‐comprising copolymers having pendant alkoxy ethyl moieties

Liu

Shih

2001

A series of copolymers based on methacrylic acid (MAA), methyl methacrylate (MMA), n-butyl methacrylate (BM), and bornyl methacrylate (BMA) with various feed molar ratios were synthesized. To introduce the protecting alkoxy ethyl moieties onto copolymers, the pendant carboxyl groups were further reacted with alkyl vinyl ether. The pendant alkoxy ethyl groups on copolymers could be deprotected by acid catalyst. Characterization of positive-tone photoresist-comprising copolymers having pendant alkoxy ethyl groups was carried out. Effects of alicyclic bornyl groups on the sensitivity and thermal properties of copolymers were investigated. It was found that the existence of bornyl groups in polymer might interfere with the hydrogen bonding produced by pendant carboxyl groups, leading to the decrease of thermal resistance. Acid-catalyzed dehydration crosslinking of pendant carboxyl groups of copolymers was also investigated. The exposure characteristic curves and the lithographic evaluation of the positive-tone photoresist were all investigated. Effects of alicyclic bornyl groups on the plasma etching resist of copolymers were also evaluated.