Effect of 3C-SiC(100) initial surface stoichiometry on bias enhanced diamond nucleation

Arnault, Jean-Charles; Intiso, Luciana; Saada, S.; Delclos, S.; Bergonzo, P.; Polini, Riccardo

doi:10.1063/1.2433033

Cited by 12 publications

(8 citation statements)

References 18 publications

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“…Its ratio represents 93% of the total signal at the C1s core level, compared to 53% for the initial Si-rich 3C-SiC(100) surface. [24] The XAES C KVV/Si LVV area ratio supports this trend. It shows 13.8 for the C-terminated surface compared to 2.2 for the Si-rich surface.…”

Section: Ben On 3c-sic(100) Surfaces With Differing Surface Stoichiomsupporting

confidence: 72%

Surface Science Contribution to the BEN Control on Si(100) and 3C‐SiC(100): Towards Ultrathin Nanocrystalline Diamond Films

Arnault

Saada

Delclos

et al. 2008

Chemical Vapor Deposition

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of thin and smooth nanocrystalline diamond films requires a high degree of control of the nucleation stage. The nature of the interface between diamond film and substrate is also important for some applications. The successive steps of the bias-enhanced nucleation (BEN) process are studied in-situ on Si(100) and 3C-SiC(100) using electron spectroscopies. Thin nanodiamond films (80-900 nm) have been achieved on Si(100). The formation of a thin covering SiC layer (2-3 nm) during the plasma exposure for parameters stabilization (PEPS) step leads us to study the plasma/surface interactions on 3C-SiC(100) surfaces. The C-terminated 3C-SiC(100) demonstrates a large inertia under microwave plasma (MP)CVD conditions. An enhancement of diamond nucleation on this surface is observed. Moreover, surface analysis reveals very little damage after BEN on 3C-SiC surfaces.

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Section: Ben On 3c-sic(100) Surfaces With Differing Surface Stoichiomsupporting

confidence: 72%

Surface Science Contribution to the BEN Control on Si(100) and 3C‐SiC(100): Towards Ultrathin Nanocrystalline Diamond Films

Arnault

Saada

Delclos

et al. 2008

Chemical Vapor Deposition

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“…This way, we could assume that the kinetic energy distributions of ions impinging the 3C-SiC surface remained comparable for the three samples. Indeed, we demonstrated previously that the surface stoichiometry of 3C-SiC surfaces plays a significant role on diamond nucleation [11]. Moreover, the substrate temperature is still a key parameter governing the nucleation mechanism.…”

Section: Discussionmentioning

confidence: 95%

The effects of Methane Concentration on diamond nucleation and growth during bias enhanced nucleation on 3C-SiC(100) surfaces

Arnault¹,

Saada

Intiso³

et al. 2006

MRS Proc.

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The effects of methane concentration on the nucleation and growth of diamond during bias enhanced nucleation treatment was studied on 3C-SiC (100) surfaces. At low methane concentration of 1%, no diamond nucleation was observed, whereas at 3 %, nucleation density values as high as 4x10 10 / cm 2 were reached. Increasing further the methane concentration to 5% induced a slight but significant enhancement of the diamond nucleation density, which in this case was measured to be 7 x10 10 / cm 2 . Moreover, Field Emission Gun Scanning Electron Microscopy (FEG-SEM) pictures emphasized clearly that the methane content also affects the growth mechanisms.Mater. Res. Soc. Symp. Proc. Vol. 956

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“…54 These modifications of the extreme surface were, however, sufficient to significantly influence diamond nucleation. 55 Lastly, on iridium, a weak amount of carbon may be dissolved into the substrate during plasma exposure, 56 which could segregate at the surface after cooling. The formation of furrows along o1104 directions at the iridium (100) surface has been observed.…”

Section: Surface Mechanisms Competing With Heterogeneous Diamond Nuclmentioning

confidence: 99%

Diamond Nucleation and Seeding Techniques: Two Complementary Strategies for the Growth of Ultra-thin Diamond Films

Arnault

Girard

2014

Nanodiamond

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The controlled growth of ultra-thin diamond layers on a diversity of substrates is a major challenge for many technological applications (heat spreaders, electromechanical systems, etc.). This explains the huge effort produced during the last two decades to master the early stages of diamond formation. Two main pathways have been investigated in the literature. The nucleation pathway aims to produce diamond nuclei, i.e., the smallest thermodynamically stable diamond islands, at the substrate surface. This is mainly performed by in situ treatments preceding diamond chemical vapor deposition (CVD) growth, such as bias enhanced nucleation (BEN). The second approach consists of skipping the nucleation stage by covering, ex situ, the substrate with diamond nanoparticles, which act as seeds for diamond CVD growth. The present chapter is a review of these pathways. Their respective benefits and drawbacks are discussed. Finally, these two approaches appear very complementary. Seeding allows the growth of ultra-thin diamond layers on large non-conductive substrates with micrometric patterns. On the other hand, the BEN in situ nucleation treatment remains the favored technique to achieve well-adherent diamond films and diamond heteroepitaxy.

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Effect of 3C-SiC(100) initial surface stoichiometry on bias enhanced diamond nucleation

Abstract: Composite diamond-like carbon and silicon carbide tips grown on oblique-cut Si(111) substrates Appl.

Cited by 12 publications

References 18 publications

Surface Science Contribution to the BEN Control on Si(100) and 3C‐SiC(100): Towards Ultrathin Nanocrystalline Diamond Films

Surface Science Contribution to the BEN Control on Si(100) and 3C‐SiC(100): Towards Ultrathin Nanocrystalline Diamond Films

The effects of Methane Concentration on diamond nucleation and growth during bias enhanced nucleation on 3C-SiC(100) surfaces

Diamond Nucleation and Seeding Techniques: Two Complementary Strategies for the Growth of Ultra-thin Diamond Films

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