Effect of 100MeV Ni9+ ion irradiation on MOCVD grown n-GaN

Kumar, Vibhor; Kumar, J.; Puviarasu, P.; Basha, S. Munawar; Kanjilal, D.; Asokan, K.

doi:10.1016/j.physb.2011.08.009

Cited by 12 publications

(4 citation statements)

References 25 publications

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“…Ga2O3 peaks appearing at 31.11, 52.92, 47.83 and 70.06 can be attributed to interface diffusion at GaN/Al2O3 interface. Similar results about interface diffusion have been previously reported in literature 18,19,20,21,22 .…”

Section: X-ray Diffraction Measurementssupporting

confidence: 91%

“…Ion irradiation at high energy introduces traps in the deeper levels of the energy bandgap, these defects act as the trapping centers for electrons and holes. This phenomenon results into reduction of the bandgap of the material under study and can be seen as band tailing effects 21 , that we also see in Figure 2.…”

Section: Uv-visible Optical Absorption Spectroscopymentioning

confidence: 59%

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Effect of 50MeV Li3+ ion irradiation on structural, optical and electrical properties of amorphous Se95Zn5 thin films

Ahmad

Sethi

Nasir

et al. 2015

AIP Conference Proceedings

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In this paper, we present the effects of high-energy Ni++ ion irradiation on the structural and optical properties of GaN films. Three different irradiation doses of 10 13 , 10 14 , and 10 15 ions/cm 2 were used while keeping the ion energy at 700keV. The irradiation induced structural and optical changes in GaN films were measured using X-ray diffraction (XRD) and UV-Vis spectroscopy. The XRD measurements on irradiated films discovered several extra peaks in the XRD spectrum compared with the as-grown GaN film indicating the formation of new phases or defects in the GaN film due to the ion irradiation. The intensity of these extra peaks increases with increasing ion dose, suggesting that the density of defects in the GaN film also increases with increasing ion dosage. The UV-Vis measurements revealed a decrease in the bandgap of the irradiated GaN films from 3.40 eV for the pristine GaN film to 3.26 eV for the film irradiated with highest dose of 10 15 ions/cm 2 . The decrease in bandgap can be attributed to the creation of defects and/or the formation of new phases in the GaN film due to the ion irradiation.

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Section: X-ray Diffraction Measurementssupporting

confidence: 91%

Section: Uv-visible Optical Absorption Spectroscopymentioning

confidence: 59%

Effect of 50MeV Li3+ ion irradiation on structural, optical and electrical properties of amorphous Se95Zn5 thin films

Ahmad

Sethi

Nasir

et al. 2015

AIP Conference Proceedings

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“…Gallium nitride (GaN) is a wide bandgap semiconductor material with excellent properties such as wide bandgap (3.39 eV) and high breakdown field (3 MV cm −1 ) [1,2]. With the development of nuclear and space technology, GaN devices will play a role in new high-tech fields such as highenergy nuclear radiation and aerospace vehicles [3].…”

Section: Introductionmentioning

confidence: 99%

Study of the photoluminescence properties of GaN irradiated with low fluence Ta ions

Wei,

Zhao,

Liu

et al. 2024

Semicond. Sci. Technol.

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The irradiation influences the properties of GaN. We studied the irradiation of n-type, p-type, and i-type GaN with 2.9865GeV Ta ions, with experimental irradiation fluence of 3×108, 3×109, and 2×1010 cm-2, respectively. Low fluence ion irradiation of GaN enhances the luminescence performance of the samples and releases stress between GaN and the sapphire substrate. We have proved that this is due to the displacement of Ga or N atoms repairing the defects caused by the entry of irradiated ions, thus enhancing the performance of GaN. This provides a reference for low fluence irradiation of GaN.

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“…In order to apply these materials to the space environment, it is necessary to first understand the response of the materials to irradiation. To our knowledge, several experiments have been performed to investigate the behavior of GaN under irradiated environment [34][35][36], but theoretical studies of the nonadiabatic behavior of material in the irradiation environment are also urgently needed. Therefore, it is necessary to understand the dynamic energy deposition process for GaN under ion beam irradiation and the interaction between the moving ion and the GaN target.…”

Section: Introductionmentioning

confidence: 99%

Crossover of energy deposition and semi-stable chemical bonding in the nonadiabatic dynamics of GaN under proton irradiation

Deng

Feng

2023

J. Phys.: Condens. Matter

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Understanding the ion-solid interactions of charged particles in materials facilitates the development of ion beam irradiation techniques. Combining Ehrenfest dynamics and time-dependent density-functional theory (ED-TDDFT), we investigated the electronic stopping power (ESP) of an energetic proton in GaN crystal and studied the ultrafast dynamic interaction between the proton and target atoms during the nonadiabatic process. We found a crossover phenomenon of ESP at 0.36 a.u. along the <100> and <110> channels, which is interpreted by the charge transfer between the host material and the projectile and the stopping force exerted on the proton. At velocities of 0.2 and 1.7 a.u., we demonstrated that the reversal of the average number of charge transfer and the average axial force resulted in the reversed energy deposition rate and ESP in the corresponding channel. Further analysis of the evolution of non-adiabatic electronic states revealed the existence of the transient and semi-stable N-H chemical bonding during irradiation process, which is introduced by the electron clouds overlap of N sp3 hybridization and the s orbitals of the proton. These results provide meaningful information for the interactions between energetic ions with matter.

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Effect of 100MeV Ni9+ ion irradiation on MOCVD grown n-GaN

Cited by 12 publications

References 25 publications

Effect of 50MeV Li3+ ion irradiation on structural, optical and electrical properties of amorphous Se95Zn5 thin films

Effect of 50MeV Li3+ ion irradiation on structural, optical and electrical properties of amorphous Se95Zn5 thin films

Study of the photoluminescence properties of GaN irradiated with low fluence Ta ions

Crossover of energy deposition and semi-stable chemical bonding in the nonadiabatic dynamics of GaN under proton irradiation

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