Abstract:The effect of irradiation by protons with an energy of 15 MeV with fluences of (1-40)٠1012 cm-2 on the spectral characteristics of UV 4H-SiC photodetectors was considered. Photodiodes with Schottky barriers were formed by thermal vacuum sputtering with a thickness of 20 nm and a diameter of 8 mm on 4H-SiC structures with CVD epitaxial layers with a concentration of uncompensated donors Nd-Na=(1-4)٠1014 cm-3 grown on n+-4H-SiC substrates. UV photodetectors withstand irradiation by protons with a fluences of 4٠1… Show more
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