Effect and utilization of common source inductance in synchronous rectification

Yang, Boyi; Zhang, J.

doi:10.1109/apec.2005.1453213

Cited by 50 publications

(19 citation statements)

References 5 publications

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“…This inductance is called source inductance, and it affects the performance of the converter. Common source inductance is the loop inductance shared by the gate driver and the main power transfer path [4]. Potential application of the full-wave rectifier circuit is implanted in medical instruments, inductive power transfer to weapons, power transfer using space reflectors and power generation in space [5].…”

Section: Resultsmentioning

confidence: 99%

Designation and Investigate of a Full-Wave Controller Rectifier (FWCR) for Effect Source Inductance for Full Wave Rectifier

et al. 2016

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Abstract. The full wave rectifier with RL load consists of all the SCRs as controlled devices. This full wave converter can operate in quadrants and output voltage can be negative in case of inductive loads. The power factor is poorer than a half converter, as the full bridge converter is primarily used to control the DC motor speed [1].The purpose of this paper is to solve higher ripper power supply in a full wave controlled rectifier using an RL load of 240rms voltage, 50Hz with an attached source inductance, Ls of 10mH value. The average output voltage can be varied from 100-200VDC. The performance of a full wave rectifier with source inductance is to create conduction of four thyristor simultaneously with overlapping angle. The result obtained is with an efficiency of 50.18% at output RL Load.

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Section: Resultsmentioning

confidence: 99%

Designation and Investigate of a Full-Wave Controller Rectifier (FWCR) for Effect Source Inductance for Full Wave Rectifier

et al. 2016

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“…The three-phase single-switch rectifier is simulated in the Saber tool. The simulation system schematic and parameters are shown in Fig.13 and Table II which voltage during the drain current change which will slow it down [14]. Because of the reduced voltage spike and increased current speed, the hybrid structure will decrease the turn-off switch energy from 88.4μJ to 76.7 μJ compared with wirebond structure.…”

Section: Insulation Layer Epo-tek 600mentioning

confidence: 99%

A novel hybrid packaging structure for high-temperature SiC power modules

Wang

Chen

Boroyevich

et al. 2011

2011 IEEE Energy Conversion Congress and Exposition

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This work presents a novel hybrid packaging structure for high-temperature SiC power modules that combines the benefits of both the wirebond structure and the planar structure. With the hybrid structure, the power modules can achieve the same footprint and similar parasitics, but much easier fabrication process and more reliable top-side interconnections, compared with regular planar structures. The new structure and its fabrication process are presented and a prototype module is built based on SiC JFET. Detailed comparisons are also conducted between the hybrid, planar, and wirebond structures. The results reveal the better performances of the hybrid structure in smaller parasitics than the wirebond structure, and easier fabrication than the planar structure. Finally, a multiple chips hybrid structure power module is built and tested in high temperature.

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“…The high operating temperature of the GaN power devices may not be fully utilized since the Si gate driver may limit the operating temperature of the power module. The parasitic components (especially parasitic inductances in the gate control loop) also limit the switching speed of the Manuscript GaN power switches [5], [6]. In recent years, an all-GaN integration scheme based on the AlGaN/GaN-on-Si platform was proposed [7]- [9], in which the lateral power switches and peripheral circuits with sensing/control/protection functional blocks are monolithically integrated.…”

Section: Substrate-coupled Cross-talk Effects On An Algan/gan-on-si Smentioning

confidence: 99%

Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform

Jiang

Tang

Zhou

et al. 2014

IEEE Trans. Electron Devices

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Cross talks between low-voltage peripheral devices and high-voltage (HV) power devices on an AlGaN/GaN-on-Si smart power IC platform are investigated by monitoring the transfer, output, and transient characteristics of a low-voltage AlGaN/GaN high-electron mobility transistor (HEMT) with an HV bias stress applied to an adjacent isolated electrode. The electric measurement was conducted under two types of substrate termination, i.e., floating and grounded. The substrate termination is shown to be the critical factor in the cross talk. The low-voltage HEMT exhibits significant drain-current degradation with a floating substrate, but remains stable with a grounded substrate. It is determined that a coupling path of the switched HV stress is formed from the HV node to the floating low-resistivity Si substrate, and then from the substrate to the HEMT. The negative net charges in the GaN buffer are caused by the electrons injected from the 2DEG channel. It is found that a grounded substrate is helpful for eliminating the cross-talk effect.Index Terms-AlGaN/GaN-on-Si power device platform, buffer traps, cross talk, substrate termination.

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Effect and utilization of common source inductance in synchronous rectification

Cited by 50 publications

References 5 publications

Designation and Investigate of a Full-Wave Controller Rectifier (FWCR) for Effect Source Inductance for Full Wave Rectifier

Designation and Investigate of a Full-Wave Controller Rectifier (FWCR) for Effect Source Inductance for Full Wave Rectifier

A novel hybrid packaging structure for high-temperature SiC power modules

Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform

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