1998
DOI: 10.1016/s0168-583x(98)00181-5
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EELS analysis of SiC crystals under hydrogen and helium dual-ion beam irradiation

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Cited by 31 publications
(19 citation statements)
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“…The substrate spectra have relatively narrow volume plasmon peaks, typical of crystalline silicates, with weak surface plasmons between 8 eV and 12 eV originating from the upper and lower surfaces of the thin specimen. The volume plasmon peaks from the rims are significantly broader and are often shifted to a lower energy because surface plasmon contributions are greater due to irradiation-induced atomic-bond disruption, the presence of vesicles, and nanoporosity (12,18,19). Water IT, EG, and H-K features are observed in some vesicles in H + -irradiated rims but not in He + -irradiated rims, where, instead, the He-K core scattering edge at ∼22 eV is observed in some vesicles (Fig.…”
Section: Significancementioning
confidence: 99%
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“…The substrate spectra have relatively narrow volume plasmon peaks, typical of crystalline silicates, with weak surface plasmons between 8 eV and 12 eV originating from the upper and lower surfaces of the thin specimen. The volume plasmon peaks from the rims are significantly broader and are often shifted to a lower energy because surface plasmon contributions are greater due to irradiation-induced atomic-bond disruption, the presence of vesicles, and nanoporosity (12,18,19). Water IT, EG, and H-K features are observed in some vesicles in H + -irradiated rims but not in He + -irradiated rims, where, instead, the He-K core scattering edge at ∼22 eV is observed in some vesicles (Fig.…”
Section: Significancementioning
confidence: 99%
“…We used valence electron energy-loss spectroscopy (VEELS) because its ability to detect water in situ at the nanoscale has been demonstrated in aqueous liquids, biomaterials, and ices (15)(16)(17). VEELS characterizes the low-loss region of the energy loss spectrum (0-50 eV), where features due to plasmons, valence band transitions, −OH, and H 2 O can be observed (12,(15)(16)(17)(18)(19) …”
mentioning
confidence: 99%
“…4. It is known that there are a number of excitation levels of hydrogen atom in SiC in this energy region, 11-14 eV, 14,15) and hence it is considered that the bright contrast should correspond to hydrogen distributions, or direct imaging of hydrogen. Since the bulk plasmon peaks of the surface layer and the deep region are located at 21.0 eV and 19.3 eV respectively, the top layer more contributes to the image intensity in (c).…”
Section: (A)-(d)mentioning
confidence: 99%
“…[4][5][6] The solubility of hydrogen in SiC is also very low. Hydrogen is trapped at both Si-and C-sites by the displacement damage, where it forms C-H or Si-H. 7) Thermal desorption spectrometry has shown that the mobility of hydrogen in SiC increases above 1073 K. 8) Therefore, hydrogen could potentially enhance cavity formation at temperatures of 1073 K and above, which corresponds to the operating temperature range of a fusion reactor using a SiC/SiC composite. The effects of the simultaneous production of displacement damage, helium and hydrogen in SiC must be known to predict the material's lifetime in the fusion reactor environment.…”
Section: )mentioning
confidence: 99%