2019
DOI: 10.3390/mi10050300
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Editorial for the Special Issue on Miniaturized Transistors

Abstract: Complementary Metal Oxide Semiconductor (CMOS) devices and fabrication techniques have enabled tremendous technological advancements in a short period of time [...]

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Cited by 4 publications
(2 citation statements)
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“…Silicon, germanium and silicon oxide nanowires, for example, can be formed on different substrates by using metal catalysts in the form of tin, indium or gold nanodroplets [ 13 15 ]. Such nanometre-sized one-dimensional materials are, therefore, promising for gate-all-around architectures [ 16 17 ], which are very attractive for future low-power field-effect transistors (FETs) [ 18 ] and thermoelectrics [ 19 21 ].…”
Section: Introductionmentioning
confidence: 99%
“…Silicon, germanium and silicon oxide nanowires, for example, can be formed on different substrates by using metal catalysts in the form of tin, indium or gold nanodroplets [ 13 15 ]. Such nanometre-sized one-dimensional materials are, therefore, promising for gate-all-around architectures [ 16 17 ], which are very attractive for future low-power field-effect transistors (FETs) [ 18 ] and thermoelectrics [ 19 21 ].…”
Section: Introductionmentioning
confidence: 99%
“…[12] Silicon, germanium and silicon oxide nanowires, for example, can be formed on different substrates using metal catalysts in form of tin, indium or gold nanodroplets. [13] [14] Such nanometre-sized onedimensional materials are therefore promising for gate all-round architectures [15], which are very attractive for future low-power field effect transistors (FETs) [16] or thermoelectrics. [17] [18] [19] 3…”
Section: Introductionmentioning
confidence: 99%