Extensive researches have revealed that valley, a binary degree of freedom (DOF), can be an excellent candidate of information carrier. Recently, valley DOF is introduced into photonic systems, and several valleyâHall photonic topological insulators (PTIs) are experimentally demonstrated. However, in the previous valleyâHall PTIs, topological kink states only work at a single frequency band, which limits potential applications in multiband waveguides, filters, communications, and so on. To overcome this challenge, here a valleyâHall PTI, where the topological kink states exist at two separated frequency bands, is experimentally demonstrated in a microwave substrateâintegrated circuitry. Both the simulated and experimental results demonstrate the dualâband valleyâHall topological kink states are robust against the sharp bends of the internal domain wall with negligible intervalley scattering. This work may pave the way for multichannel substrateâintegrated photonic devices with high efficiency and high capacity for information communications and processing.