Edge emission of II-VI compounds

Gutsche, E.; Goede, O.

doi:10.1016/0022-2313(70)90035-9

Cited by 36 publications

(11 citation statements)

References 21 publications

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“…4 b to d cannot be explained in terms of such a ('classical" oscillator unless additional assumptions are made. This is remarkable since it is known from absorption measurements [5] that the exciton lines of CdS a t 80 K show the symmetrical Lorentz form.…”

Section: Unmodulated Spectramentioning

confidence: 80%

Changes of the excitonic optical properties of CdS introduced by an electron beam

Ratsch¹

1975

Physica Status Solidi (b)

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Reflection spectra and luminescence in the exciton region of CdS a t 80 K under the influence of a low energy electron beam (2 to 3 keV) have been investigated. Long-term changes of the spectral lineshape have been observed. It is found that the electron beam produces a negative surface charge, the electric field of which dissociates the excitons in a surface layer. The reflected intensity of light is determined by interference of waves reflected a t the boundaries of the exciton-free layer. The lineshape of the reflection spectra depends on the thickness of this layer. Es werden Reflexionsspektren und Lumineszenz im Exzitonenbereich von CdS bei80 K unter dem EinfluB eines niederenergetischen Elektronenstrahls (2 bis 3 keV) untersucht. Dabei werden Langzeitanderungen der spektralen Linienform beobachtet. Es wird gefunden, daB der Elektronenstrahl eine negative Oberfllchenladung hervorruft, durch deren elektrischesFeld die Exzitonen ineiner OberflPchenschicht dissoziieren. Die reflektierte Lichtintensitat wird durch Interferenz der an den Grenzen der exzitonenfreien Schicht reflektierten Wellen bestimmt. Die Linienform der Reflexionsspektren hangt von der Dicke dieser Schicht ab.

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Section: Unmodulated Spectramentioning

confidence: 80%

Changes of the excitonic optical properties of CdS introduced by an electron beam

Ratsch¹

1975

Physica Status Solidi (b)

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“…A s according to (2) and (3) the A, B ground state exciton lines of CdS and CdSe exhibit Lorentzian line shape in the temperature range considered in this note, the half-widths can be determined from the energetic positions of the maxima and minima of the A1 /I spectrum of these lines, using the formulae reported in (5). The results are compiled in Table 1.…”

Section: -4mentioning

confidence: 98%

Thermo‐absorption of CdS and CdSe in the exciton absorption region

Lange

1971

Physica Status Solidi (b)

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The thermal modulation method has been frequently applied to the study of the optical properties of solids (see e. g. (1)). In the present note measurements of the thermo-absorption of very thin CdS and CdSe single crystals are reported in order to find out which information can be gained from this type of spectra in comparison with dtz/do spectra.shaped with an area of 2x3 mm and a thickness of (3 to ~) x I O -~ cm. The crystals were mounted in a Dewar vessel and cooled to liquid nitrogen. Heating of the samples was performed either by directly passing a current through the sample between evaporated electrodes or by indirect heating placing the crystal between mica sheets covered with Sn02. The pulses applied to the sample had a frequency of 10 Hz. The temperature of the various samples was in the range around 90 K, as determined from the energetic position of the exciton lines, using the results of

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“…Les intensités des bandes d'émission à zéro phonon et celles de leurs répliques phonons sont gouvernées par la relation usuelle [27,28] donnant l'intensité de la n-ième réplique Io intensité de la raie à zéro phonon et N paramètre mesurant le nombre moyen de phonons émis. Nous remarquons que les rapports I1/I0 des bandes D.A.P.…”

Section: Position éNergétique Des Maximums D'émis-unclassified

“…Enfin, nous avons représenté la forme des bandes d'émission D.A.P. par l'expression proposée par [28] et reprise par [19] : N = nombre moyen de phonons émis, p = nombre de phonons LO d'énergie nWLO, Eo = énergie du maximum d'émission, H = largeur à 1/2 hauteur.…”

Section: Influence De La Température Et Bandesunclassified

Caractérisation des émissions donneur-accepteur dans ZnSe

1980

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2014 Cet article traite des émissions de paires donneurs-accepteurs (D.A.P.) dans le ZnSe cubique et des émissions bande de conduction-accepteurs (BC-A) qui leur sont corrélées. Les mesures directes des positions des maximums des bandes d'émission sous excitation ne sont pas assez précises pour permettre de faire un choix entre les différents donneurs et accepteurs possibles. Nous faisons d'abord un ajustement avec la théorie de Eagles pour les bandes BC-A ; puis un programme de calcul des profils d'émission D.A.P. conduit à la valeur de l'énergie coulombienne d'interaction et permet d'obtenir l'énergie d'ionisation des donneurs. Des expériences de thermoluminescence donnent des profondeurs de pièges corrélées aux accepteurs observés ainsi qu'à des pièges plus profonds. Pour finir on discute les conditions d'observation des différentes bandes d'émission. Abstract. 2014 This paper is concerned with the donor-acceptor pair emission (D.A.P.) in cubic ZnSe and the correlated conduction band-acceptor emission (BC-A). Direct measurements of the peak positions of the bands are not accurate enough to enable a choice to be made between the different possible donors and acceptors. We first made the BC-A shape with Eagles' theory obtaining the ionization energies of the acceptors ; then a computer calculation of the D.A.P. emission profile leads to the coulombic energy correction and allows the donor ionization energies to be obtained. Thermoluminescence experiments give trap depths correlated with the observed acceptors, and also deeper traps. A discussion is given of the experimental situation leading to the observation of the different emission bands.

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Edge emission of II-VI compounds

Cited by 36 publications

References 21 publications

Changes of the excitonic optical properties of CdS introduced by an electron beam

Changes of the excitonic optical properties of CdS introduced by an electron beam

Thermo‐absorption of CdS and CdSe in the exciton absorption region

Caractérisation des émissions donneur-accepteur dans ZnSe

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