Edge dislocation effect on optical properties in wurtzite ZnO

Stroud, Alicia; You, Jeong Ho

doi:10.1016/j.jcrysgro.2011.12.054

Cited by 4 publications

(2 citation statements)

References 52 publications

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“…Namely, the generated strain fields around screw dislocations leading to heterogeneous spatial distribution of the carriers are known to disturb the density of states reducing the PL recombination efficiency. On the other hand, it has been pointed out that the edge dislocations assume an important role on the deep level emission in semiconductors by trapping point defects and impurities in their strain fields [3,46].…”

Section: Optical Propertiesmentioning

confidence: 99%

The Role of Edge Dislocations on the Red Luminescence of ZnO Films Deposited by RF‐Sputtering

Widdascheck

Peres

Magalhães

et al. 2015

Journal of Nanomaterials

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The existence of extended defects (i.e., dislocations) in inorganic semiconductors, such as GaN or ZnO, responsible for broad emission peaks in photoluminescence analysis remains unresolved. The possible assignments of these luminescence bands are still matter of discussion. In this study, two different zinc oxide samples, grown under different oxygen partial pressures and substrate temperatures, are presented. Epitaxial and structural properties were analysed by means of X-ray diffraction and transmission electron microscopy techniques. They confirm that the layers are single-phase with a good crystalline quality. Nevertheless, a different density of threading dislocations, with a higher contribution of edge dislocations, was found. Photoluminescence spectroscopy has been used to investigate the optical properties. The steady state luminescence spectra performed at 14 K evidenced the donor bound exciton recombination and deep green and red emission bands. The red band with a maximum at 1.78 eV was found to be stronger in the sample grown at lower oxygen pressure which also shows higher density of threading dislocations. From the temperature and excitation density dependence of the red band, a donor acceptor pair recombination model was proposed, where hydrogen and zinc vacancies are strong candidates for the donor and acceptor species, respectively.

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Section: Optical Propertiesmentioning

confidence: 99%

The Role of Edge Dislocations on the Red Luminescence of ZnO Films Deposited by RF‐Sputtering

Widdascheck

Peres

Magalhães

et al. 2015

Journal of Nanomaterials

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“…where i ¼ 1 or 2, À i0 represents the energy broadening due to temperature-independent mechanisms such as impurities, 27) dislocations, 28,29) electron interaction and Auger processes, 30) À iLO is the energy broadening caused by the electron (excitonic)-LO phonon interaction, and Â iLO corresponds to the LO phonon temperature. The solid curves in Fig.…”

Section: áRmentioning

confidence: 99%

Optical and Electrical Properties of Au- and Ag-Doped ReSe₂

Jian

Lin

et al. 2013

Jpn. J. Appl. Phys.

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Single crystals of Au-and Ag-doped ReSe 2 (ReSe 2 :Au and ReSe 2 :Ag) have been grown by chemical vapor transport (CVT) method using iodine as a transporting agent. The optical properties are studied by absorption and polarized-thermoreflectance (PTR) spectroscopy at different polarization angles in the temperature range between 12 and 300 K. The direct band-edge excitonic transitions (E ex 1 , E ex 2 , E ex 3 , and E ex s ) have been clearly revealed for the first time in the absorption spectra when the samples are made thin enough. The dominant E ex 1 and E ex 2 excitonic transitions gets strongest as the polarization is parallel and perpendicular to the b-axis, respectively. The parameters that describe the temperature dependence of the excitonic transition energy and the broadening function are extracted and discussed. We have also performed electrical conductivity and Hall measurements at different temperatures to derive the activation energy ( 95 and 50 meV for ReSe 2 :Au and ReSe 2 :Ag, respectively). #

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Confirmation of the presence of edge dislocations in the prepared FCC ZnTe nanocrystals from the study of structural analysis through the MWH method with added Fourier analysis (W-A method) of diffraction peaks

Basak,

Das

2024

Materials Science in Semiconductor Processing

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Edge dislocation effect on optical properties in wurtzite ZnO

Cited by 4 publications

References 52 publications

The Role of Edge Dislocations on the Red Luminescence of ZnO Films Deposited by RF‐Sputtering

The Role of Edge Dislocations on the Red Luminescence of ZnO Films Deposited by RF‐Sputtering

Optical and Electrical Properties of Au- and Ag-Doped ReSe₂

Confirmation of the presence of edge dislocations in the prepared FCC ZnTe nanocrystals from the study of structural analysis through the MWH method with added Fourier analysis (W-A method) of diffraction peaks

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Edge dislocation effect on optical properties in wurtzite ZnO

Cited by 4 publications

References 52 publications

The Role of Edge Dislocations on the Red Luminescence of ZnO Films Deposited by RF‐Sputtering

The Role of Edge Dislocations on the Red Luminescence of ZnO Films Deposited by RF‐Sputtering

Optical and Electrical Properties of Au- and Ag-Doped ReSe2

Confirmation of the presence of edge dislocations in the prepared FCC ZnTe nanocrystals from the study of structural analysis through the MWH method with added Fourier analysis (W-A method) of diffraction peaks

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Optical and Electrical Properties of Au- and Ag-Doped ReSe₂