Edge delamination of residually stressed thin films: viscoelastic effects

Krishna, Arvind

doi:10.1007/bf00037083

Cited by 4 publications

(2 citation statements)

References 29 publications

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“…At the center of the monolayer this effect leads to the observed strain-induced shifts of the exciton resonances. It is known that thin films bonded to a substrate under tensile strain delaminate at the edges (especially those perpendicular to the straining direction) to release the strain energy [35]. As a consequence, the monolayer edges experience a lifting force from the substrate, which may overcome the van-der-Waals adhesion.…”

mentioning

confidence: 99%

Reversible uniaxial strain tuning in atomically thin WSe ₂

Schmidt¹,

Niehues²,

Schneider³

et al. 2016

2D Mater.

146

164

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Due to their unique band structure, single layers of transition metal dichalcogenides are promising for new atomic-scale physics and devices. It has been shown that the band structure and the excitonic transitions can be tuned by straining the material. Recently, the discovery of single-photon emission from localized excitons has put monolayer WSe 2 in the spotlight. The localized light emitters might be related to local strain potentials in the monolayer. Here, we measure strain-dependent energy shifts for the A, B, C, and D excitons for uniaxial tensile strain up to 1.4% in monolayer WSe 2 by performing absorption measurements. A gauge factor of -54 , meV % -50 , meV % +17 , meV % and -22 meV % is derived for the A, B, C, and D exciton, respectively. These values are in good agreement with ab initio GW-BSE calculations. Furthermore, we examine the spatial strain distribution in the WSe 2 monolayer at different applied strain levels. We find that the size of the monolayer is crucial for an efficient transfer of strain from the substrate to the monolayer. RECEIVED

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mentioning

confidence: 99%

Reversible uniaxial strain tuning in atomically thin WSe ₂

Schmidt¹,

Niehues²,

Schneider³

et al. 2016

2D Mater.

146

164

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“…In the recent trend of miniaturization and simpli cation of the integrated circuit (IC) package, the thickness of the package and each component is reduced. However, the stability of internal thermal stress within the package and environmental reliability are becoming more important [1][2][3][4]. Figure 1a shows the package con guration of the semiconductor IC package with double adhesive layers and the component materials.…”

Section: Introductionmentioning

confidence: 99%

Thermal stress induced by the adhesion topology of a semiconductor integrated circuit package

Lee¹,

Kim²,

Lee

2004

Proceedings of the Institution of Mechanical Engineers, Part L:

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In the semiconductor integrated circuit (IC) package, the top surface of the silicon chip is directly attached to the lead frame by a double-sided adhesive layer. Under the functional operation, the IC package has been known to encounter such thermomechanical failure as delamination. This failure is due to the thermal residual strain and stress of the adhesive surface on the silicon chip in the curing-cooling process. The induced thermal effects in the curing process affect the fatigue life of the IC package. Thus, it is necessary to reduce the thermal stress induced on the silicon chip. In this paper, to reduce the surface failure and improve the durability of the silicon chip, the adhesive topologies and thermal stresses on the silicon chip at curing temperature are studied by nite element analysis (FEA).

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