BiCuSeO oxyselenides have been successfully fabricated by self-propagating high-temperature synthesis (SHS). Compared with the SHS process of the binary or ternary alloys, thermal analysis indicates the ignition temperature of quaternary layered BiCuSeO oxyselenides approaches the second lower melting point of the compound. The ZT value of SHS-synthesized BiCuSeO is almost 1.5 times larger than that of the solid state reaction (SSR) product at 873K. This is attributed to the existing amorphous region, nano-pores, and optimized grain size. Furthermore, with the partial substitution of Pb 2+ for Bi 3+ , ZT was enhanced through the optimization of charge carrier concentration and band gap narrowing. This achieved a ZT of 0.91 at 873K for Bi1-xPbxCuSeO (x=0.04). Combining with the Debye-Callaway model