EBSD characterization of the growth mechanism of SiC synthesized via direct microwave heating

Wang, Jigang; Huang, Shan; Liu, Song; Zhou, Qing

doi:10.1016/j.matchar.2016.02.006

Cited by 16 publications

(2 citation statements)

References 31 publications

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“…The single SiC whisker was smooth and straight with a diameter of about 0.15 μm ( Figure 5 a). The lattice space value was measured to be 0.25 nm ( Figure 5 b), which was in agreement with the plane distance of the (111) plane [ 24 ], the close-packed planes of β -SiC, and so it was concluded that the whiskers preferentially grew along the <111> direction. The SAED patterns confirmed that the SiC whisker was single crystalline β -SiC (3C-SiC).…”

Section: Resultssupporting

confidence: 71%

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In Situ Growth Behavior of SiC Whiskers with High Aspect Ratio in the Synthesis of ZrB2-SiC Composite Powders

et al. 2020

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Aiming to provide key materials in order to improve the fracture toughness of ZrB2 ceramics, ZrB2-SiC composite powders with in situ grown SiC whiskers were successfully synthesized via a simple molten-salt-assisted ferrous-catalyzed carbothermal reduction method. Thermodynamic calculations on the ZrO2-SiO2-B2O3-C-Fe system were carried out. The effects of heating temperature and ferrous catalyst amount on the growth behavior of SiC whiskers in ZrB2-SiC composite powders were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDS), and transmission electron microscopy (TEM). The results showed that the aspect ratio of SiC whiskers and the relative content of ZrB2 particles increased with increasing heating temperature (1523–1723 K) and a molar ratio of Fe to ZrSiO4 from 0:1 to 0.2:1. Phase-pure ZrB2-SiC composite powders were obtained at 1723 K when the molar ratio of raw materials was 0.2:0.5:1:1.5:8.4 (Fe:NaCl:ZrSiO4:B2O3:C). Single crystalline β-SiC whiskers with a mean diameter of 0.15 μm and an aspect ratio of 70–120 were homogeneously distributed in the final composite powders. A molten-salt-assisted iron-catalyzed vapor–solid mechanism was promoted for the growth mechanism of in situ grown SiC whiskers.

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Section: Resultssupporting

confidence: 71%

“…Some main stepwise reactions in Reaction (3) are listed as follows [ 24 , 25 , 26 ]: SiO 2 (s) +C (s) = SiO (g) + CO (g) SiO (g) + 3CO (g) = SiC (s) + 2CO 2 (g) SiO (g) + 2C (s) = SiC (s) + CO (g) C (s) + O 2 (g) = 2CO (g) …”

Section: Resultsmentioning

confidence: 99%