2003
DOI: 10.1016/s1468-6996(03)00009-3
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EB-PVD process and thermal properties of hafnia-based thermal barrier coating

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Cited by 112 publications
(42 citation statements)
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“…In general, TBC materials have to fulfill most of the following requirements, such as a stable phase, low thermal conductivity (<2 W m −1 K −1 ), high thermal expansion coefficient (>9 × 10 −6 K −1 ), chemical resistance, low sintering rate, and high fracture toughness. A worldwide effort has been undertaken to identify new candidates for a TBC application [1,2]. In our group, we have prepared some alkaline earth perovskites such as SrCeO 3 and SrHfO 3 and studied their applicability to the TBC materials [3][4][5][6].…”
Section: Introductionmentioning
confidence: 99%
“…In general, TBC materials have to fulfill most of the following requirements, such as a stable phase, low thermal conductivity (<2 W m −1 K −1 ), high thermal expansion coefficient (>9 × 10 −6 K −1 ), chemical resistance, low sintering rate, and high fracture toughness. A worldwide effort has been undertaken to identify new candidates for a TBC application [1,2]. In our group, we have prepared some alkaline earth perovskites such as SrCeO 3 and SrHfO 3 and studied their applicability to the TBC materials [3][4][5][6].…”
Section: Introductionmentioning
confidence: 99%
“…However this standard material has a limited temperature capability due to accelerated sintering and phase transformations at high temperatures. As a result, a world-wide research has been undertaken to identify new candidates for a TBC application [6,7]. In general, TBC materials have to fulfill most of the following requirements, such as a stable phase, low thermal conductivity, high thermal expansion coefficient, chemical resistance, low sintering rate and high fracture toughness.…”
Section: Introductionmentioning
confidence: 99%
“…4 Hafnium nitride films have previously been grown by reactive direct current diode sputtering, 5 reactive radio frequency diode sputtering, 6,7 reactive direct current magnetron sputtering, [8][9][10][11][12][13][14][15][16][17] reactive radio frequency magnetron sputtering, [18][19][20][21][22] reactive high power impulse magnetron sputtering, 23 plasma-assisted atomic layer deposition, 24 electron beam physical vapor deposition, 25 activated reactive evaporation (ARE), 26 pulsed laser deposition 27,28 and ion beam assisted deposition (IBAD). 29 a tumi@hi.is Application of HfN thin films include diffusion barriers 7,22,30 and gate electrodes [31][32][33] in integrated circuits, as microelectronic emitters in field emitter arrays, 18 as absorber layer in solar cells, 17 as an intermediate layer in hydrogen permeation membranes, 34 as thermal barrier coatings 25 and as hard and protective coatings on tools. 8,35 High power impulse magnetron sputtering (HiPIMS) is a fairly new growth method where short and powerful pulses with a low repetition frequency are applied to a conventional magnetron sputter tool.…”
Section: Introductionmentioning
confidence: 99%