Earth‐Abundant Tin Sulfide‐Based Photocathodes for Solar Hydrogen Production

Cheng, Wei; Singh, Nirala; Elliott, William S.; Lee, Joun; Rassoolkhani, Alan; Jin, Xianglin; McFarland, Eric W.; Mubeen, Syed

doi:10.1002/advs.201700362

Cited by 30 publications

(24 citation statements)

References 40 publications

(68 reference statements)

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“…In Figure , for both SnS/FTO and SnS/ERGO/FTO interfaces, this interval was 200 mV and 150 mV, respectively. Although these intervals may seem narrow, previous report of SnS thin film show that the potential interval where Mott‐Schottky plots are linear vary between 200 and 40 mV,, confirming our results.…”

Section: Resultssupporting

confidence: 92%

“…These acceptor densities are higher than those previously reported for SnS films obtained from electrodeposition in acidic aqueous solutions . However, it is in according with other studies where SnS was obtained through chemical bath deposition and electrodeposition from a non‐aqueous solvent . In general, Mott‐Schottky analyses of SnS films can be confusing and some contradictory results can be obtained.…”

Section: Resultsmentioning

confidence: 79%

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Electrodeposition and Characterization of a Tin Sulfide‐Electrochemically Reduced Graphene Oxide Heterojunction

et al. 2019

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This work shows the formation of a heterojunction between tin (II) sulfide (SnS) and electrochemically reduced graphene oxide (ERGO), carried out through two electrochemical steps. In the first step, graphene oxide (GO) was electrochemically reduced on a fluorine-doped tin oxide (FTO) electrode. In the second step, the ERGO/FTO substrate was used as an electrode for the electrodeposition of SnS. In this study, each electrodeposited material (ERGO, SnS and SnS/ERGO heterojunction) was analyzed and characterized using different techniques, which confirmed the SnS/ERGO heterojunction formation. By employ-ing electrochemical impedance spectroscopy (EIS) and linear sweep photovoltammetry measurements, it was confirmed that SnS deposited in both, bare FTO and ERGO, is a p-type semiconductor. Furthermore, an improvement of the photocatalytic properties of the SnS/ERGO photocathode in comparison with the SnS film was observed. This effect is related to the ERGO interlayer between the SnS film and the FTO electrode, and the structural and morphology modification of the SnS film onto ERGO.

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Section: Resultssupporting

confidence: 92%

Section: Resultsmentioning

confidence: 79%

Electrodeposition and Characterization of a Tin Sulfide‐Electrochemically Reduced Graphene Oxide Heterojunction

et al. 2019

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“…physicochemical properties and promising applications, such as energy, detection, catalysis, and optoelectronics. [36,41,51,[70][71][72][73][74][75][76][77][78][79][80][81][82] Compared with the rapid progress in 0D and 1D SnS nanostructures, there are much less reports on SnS nanostructures, their synthetic strategies and fascinating properties. In 2018, Sutter et al [83] employed in situ microscopy during molecular beam epitaxy to study the fundamental growth mechanisms of SnS.…”

Section: Synthesis Of 2d Sns Nanomaterialsmentioning

confidence: 99%

“…Notably, it is also important that SnS functionalized with other materials (e.g., polymers and other nanomaterials) is of great significance due to the synergistic effect, which holds tremendous potentials for future nanodevices in practical applications. [29,69,78,103,108,115,134,[164][165][166] In this section, the fundamental properties (crystal structure, electronic band structure, optical property, and Raman spectroscopy) and related applications of SnS-based nanostructures, including batteries and solar cells, catalysis (photocatalysis and electrocatalysis), optoelectronics, sensors, ferroelectrics, thermoelectrics, nonlinear properties, and biomedical applications, are clearly discussed.…”

Section: Properties and Applications Of Sns-based Nanostructuresmentioning

confidence: 99%

Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications

Zhu

et al. 2021

Small Science

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Tin-based binary chalcogenide Sn-X (X ¼ S, Se, Te) compounds have attracted extensive interest in the optical, optoelectronic, catalysis, and flexible systems due to their intriguing performances. [1][2][3][4][5][6][7] The Sn-X (X ¼ S, Se, Te) compounds are typically layered materials and usually have three crystalline phases: hexagonal, monoclinic, and orthorhombic; orthorhombic phase is denoted by chemical formula SnX, and hexagonal and monoclinic phases are labeled as SnX 2 . [8] Until now, SnSe and SnTe compounds have already achieved great progress in many fields, especially for thermoelectronics and ferroelectrics, [9][10][11][12] and many important reviews have been reported on SnSe and SnTe compounds due to their rapid development. [8,[13][14][15][16] For example, in 2020, Chen et al. [14] summarized a comprehensive overview of controlled synthesis, characterization, and thermoelectric performance in SnSe. In 2018, Shi et al. [8] summarized the growth, characterization, and applications (photovoltaics, supercapacitors, rechargeable batteries, phase-change memory devices, and topological insulator) of SnSe. In 2018, Li et al. [15] reviewed the development of SnS, SnSe, and SnTe, mainly focusing on the controllable tuning of the electron and phonon transport as well as the challenges for further optimization and practical applications. Among Sn-X (X ¼ S, Se, Te) compounds, tin monosulfide (SnS) as a typical black phosphorus analogue, has also received intensive scientific attention due to its unique properties, such as inexpensive, sustainable, suitable bandgap between Si (1.12 eV) and GaAs (1.43 eV), [17] high absorption coefficient (10 À4 cm À1 ), [18] strong mechanical properties, and anisotropic optoelectronic, [19][20][21] which are of great value in optoelectronics, catalysis, sensors, and nanomedicines. [7,[22][23][24][25][26][27] In addition, layered SnS with suitable spacing structures hold promising potentials in the field of lithium (Li)-ion batteries and sodium (Na)-ion batteries due to their relatively high electrical conductivity and theoretical capacity. [28][29][30][31][32] However, although popular SnS has achieved great progress in a variety of fields, few comprehensive reviews have hitherto focused on the field of SnS-based nanostructures and their fascinating applications.Inspired by important reviews on SnSe reported by Chen [14] and Li [8] in recent years, we comprehensively summarized the synthesis, characterization, and the latest progress of SnS-based nanostructures, as shown in Figure 1. First, the most commonly employed techniques (hydrothermal, vapor deposition, electrostatic assembly, etc.) for preparing SnS and SnS-based nanostructures are presented in detail with their recent progress. Furthermore, the fundamental properties (crystal structure, electronic band structure, optical property, and Raman spectroscopy) and diverse applications (batteries, solar cells, catalysis, optoelectronics, sensors, ferroelectrics, thermoelectrics, nonlinear properties, and biomedical applicatio...

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“…SnS has an indirect band gap of 1.0–1.5 eV, and a direct band gap of 1.4–2.3 eV depending on the method of preparation . Also, SnS is nontoxic and easily available . The reported methods for PEDOT:PSS‐SnS based solar cells used plain coatings without any patterns .…”

Section: Introductionmentioning

confidence: 99%

Selective Coating of SnS on the Bio‐Inspired Moth‐Eye Patterned PEDOT:PSS Polymer Films

Cao

Thi

Male

et al. 2019

Macro Materials & Eng

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A new strategy for the selective coating of tin sulfide (SnS) on the surface of moth‐eye patterned (MEP) conducting polymer film is studied by considering the optical properties of the antireflective moth‐eye pattern and flexibility of polymer films. The semiconductor SnS is selectively coated on the surface of MEP microdomes of poly(3,4‐ethylenedioxythiophene) poly(styrene‐sulfonate) (PEDOT:PSS) film. The SnS coated MEP film is obtained by using pore selectively SnS thin layer functionalized polystyrene honeycomb‐patterned porous (HCP) film as a template. Aqueous PEDOT:PSS solution is poured on the SnS functionalized HCP films and detached for the fabrication of SnS coated MEP films. The films show a satisfactory photo‐responsive property under solar stimulated light illumination due to the antireflective MEP structure of PEDOT film and homogenous SnS coating on the surface of the conducting polymer.

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Earth‐Abundant Tin Sulfide‐Based Photocathodes for Solar Hydrogen Production

Cited by 30 publications

References 40 publications

Electrodeposition and Characterization of a Tin Sulfide‐Electrochemically Reduced Graphene Oxide Heterojunction

Electrodeposition and Characterization of a Tin Sulfide‐Electrochemically Reduced Graphene Oxide Heterojunction

Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications

Selective Coating of SnS on the Bio‐Inspired Moth‐Eye Patterned PEDOT:PSS Polymer Films

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