E22 Study on Cleaving Mechanism of Silicon Wafer by Laser Beam Irradiation(Laser processing)

Takeda, Reiko; Ueda, Takashi; Furumoto, Tatsuaki; Hosokawa, Akira; Tanaka, Ryutaro

doi:10.1299/jsmelem.2009.5.589

Cited by 4 publications

(2 citation statements)

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“…The use of short-pulse laser, such as picosecond and femtosecond pulsed laser, or short wavelength laser, can reduce or even eliminate thermal damage, though the cost of the equipment climbs rapidly [8] . Wafer dicing has also been used in a number of non-traditional laser processing methods, including water guided laser, stealth laser, and laser thermal cleavage technology [9][10][11][12][13] . Water guided laser processing may e ciently reduce the heat affected zone (HAZ) and improve processing quality, but the equipment is complicated and costly.…”

Section: Introductionmentioning

confidence: 99%

An experimental investigation on laser assisted waterjet microgrooving of GaAs wafer

Duan¹,

Huang

Liu³

et al. 2022

Preprint

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Gallium arsenide (GaAs), the most extensively used compound semiconductor material, has historically been difficult to manufacture in wafer fabrication due to its brittle property. A unique method called laser assisted waterjet (LAW) has been developed and utilized to micromachining brittle and fragile materials. The inclined waterjet expels the material heated and softened by the laser and aids in cooling to reduce thermal damage during the machining process. It has a lot of potential as a micromachining tool for GaAs wafers. In this study, microgrooves on GaAs wafers are machined using dry laser, low-pressure waterjet assisted laser (LWAL), and LAW technology. In comparison to dry laser and LWAL, LAW technology can process high-quality grooves with maximum depth, minimal thermal damage, and the maximum depth to width ratio, making it suitable for GaAs wafer micromachining. The mechanism for material removal in GaAs LAW processing is discussed, and it can be concluded that the majority of the material is removed by the impact of the high-pressure waterjet when it reaches the decomposition temperature below the melting point. A full-factorial experiment is carried out on GaAs wafers using LAW technology. The results show that six process parameters, including laser power, waterjet pressure, traverse speed, inclination angle, focal plane position, and processing times, have significant effects on groove depth, groove width, and material removal rate. The groove depth, groove width, and material removal rate is increased with an increase in term of laser power. More energy is wasted when the waterjet pressure is increased, resulting in a reduction in groove depth, groove width, and material removal rate.

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Section: Introductionmentioning

confidence: 99%

An experimental investigation on laser assisted waterjet microgrooving of GaAs wafer

Duan¹,

Huang

Liu³

et al. 2022

Preprint

View full text Add to dashboard Cite

show abstract

“…Yamada et al (2006) recommended a cleaving process with a pulsed laser and the use of refrigerating chuck for cleaving with a continuous wave (CW) laser to reduce thermal damage during the cleaving processes. Takeda et al (2009) reported that separation in the same direction of the wafer cleavage plane can be achieved by lower laser energy, furthermore improving the cleaving surface. Both researchers conducted their experiments on thermal stress cleaving of a silicon wafer with the preparation of the initial crack by using the Vickers indenter impressions.…”

Section: Introductionmentioning

confidence: 99%

A study on separating of a silicon wafer with moving laser beam by using thermal stress cleaving technique

Saman

Furumoto

Ueda

et al. 2015

Journal of Materials Processing Technology

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Photoelastic observation of stress distributions in laser cleaving of glass substrates

Yamada

Maeda

Iwai

et al. 2017

Precision Engineering

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E22 Study on Cleaving Mechanism of Silicon Wafer by Laser Beam Irradiation(Laser processing)

Cited by 4 publications

References 0 publications

An experimental investigation on laser assisted waterjet microgrooving of GaAs wafer

An experimental investigation on laser assisted waterjet microgrooving of GaAs wafer

A study on separating of a silicon wafer with moving laser beam by using thermal stress cleaving technique

Photoelastic observation of stress distributions in laser cleaving of glass substrates

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