E-/D-pHEMT technology for wireless components

Wohlmuth, W.; Liebl, W.; Juneja, V.; Hallgren, Richard C.; Struble, W.; Farias, D.A.; Litzenberg, P.; Berger, O.

doi:10.1109/csics.2004.1392507

Cited by 12 publications

(3 citation statements)

References 3 publications

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“…The IP3 optimized design was fabricated using Triquint's 0.5um ED PHEMT process [6]. The process features e-mode PHEMTs with an fT ~ 30 GHz and a Vpo ~ 350mV.…”

Section: Fabrication and Resultsmentioning

confidence: 99%

High linearity-wideband PHEMT Darlington amplifier with +40 dBm IP3

Kobayashi¹

2006

2006 Asia-Pacific Microwave Conference

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This paper reports on a 0.1-3 GHz broadband matched Darlington feedback amplifier with over 40 dBm of OIP3 operating from a 5V supply. The Darlington performance is enabled by 0.5um Emode PHEMTs with fT ~ 30 GHz. The PHEMT Darlington achieves 13 dB of gain at 2 GHz and is monolithically matched to 50 ohms across a wide 0.1-3 GHz bandwidth. The IRL and ORL are better than 15 dB across the band. Noise figure of 3.3 dB and OIP3 of 41.4 dBm are achieved at 2 GHz with a P1dB compression of 21.8 dBm. The monolithically matched amplifier achieves > 40 dBm IP3 across a wide 3 GHz band.The total current consumption is only 115 mA through a 5V supply and the LC-measured junction temperature is less than 125C @ 85C base-plate. These are believed to be the best IP3 results reported for a 5V wide band Darlington feedback amplifier at 2 GHz and above.

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“…The IP3 optimized design was fabricated using Triquint's 0.5um ED PHEMT process [6]. The process features e-mode PHEMTs with an fT ~ 30 GHz and a Vpo ~ 350mV.…”

Section: Fabrication and Resultsmentioning

confidence: 99%

High linearity-wideband PHEMT Darlington amplifier with +40 dBm IP3

Kobayashi¹

2006

2006 Asia-Pacific Microwave Conference

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“…The E/D pHEMT device topology and fabrication process are detailed in some earlier publications. [1][2][3] Other advantages of using E/D mode pHEMT process are the high level of RF circuit integration where a PA, LNA and switch can be easily integrated on the same die. The availability of smaller E mode devices for ESD protection circuitry can reduce the overall die size while providing high protection against ESD damage.…”

Section: E/d-mode Phemt Processmentioning

confidence: 99%

A 1mm<sup>2</sup> two stage LNA and SP2T switch RFIC FEM for WLAN 802.11a applications

Ma¹,

Hale²,

Baeten³

2012

2012 IEEE Radio and Wireless Symposium

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This paper presents a 1mm 2 monolithic microwave integrated circuit (MMIC) LNA/SP2T switch front end module (FEM) solution based on E/D mode GaAs pHEMT technology for WLAN 802.11a applications. The proposed FEM has a two stage Enhancement-mode pHEMT LNA and Depletion-Mode pHEMT SP2T switch fully integrated on a single die with an area of 0.916x0.95mm 2 . The SP2T switch in the FEM enables WLAN transmit (TX) and receive (RX) at 4.9-5.85GHz. The receive path has an LNA with bypass mode which is controlled by a 1 bit LNA Enable control. At 3.3V supply, the FEM in the RX LNA path shows a 2.1dB noise figure with 16dB typical gain including the switch loss, the measured input third order intercept point (IIP3) and output third order intercept point (OIP3) are 2dBm and 18dBm respectively. The module has an RX DC blocking cap and VDD bypass cap integrated on die which reduces BoM count and cost for the end customer. The final die is in a 2x2mm QFN package and it passes 1000V ESD human body model (HBM).

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“…Long term reliability, RF power degradation and general lifetime requirements are not well understood for RF MEMS switches. These factors, coupled with the relatively low cost and high process maturity of solid state FET switches, processed in either GaAs [4] or silicon-on-sapphire (SOS) [5] technology solutions, have essentially kept RF MEMS switches from having any significant participation in large-scale commercial applications. In particular, the cellular handset puts an even higher constraint on RF switching solutions utilizing MEMS due to high volume, large number of switching events, and typically low profit margin requirements of any of its RF chain components.…”

Section: Introduction Mems Switch Requirements For Wireless Applicationsmentioning

confidence: 99%

Integrated Mems Switch Technology on Soi-Cmos

Costa¹,

Ivanov²,

Hammond³

et al. 2008

2008 Solid-State, Actuators, and Microsystems Workshop Technical Digest

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We describe an RF MEMS contact switch technology that has been integrated above a 0.5um silicon RFCMOS-on-SOI process. This integration strategy combines a MEMS gold cantilever contact-switch with a custom silicon-on-insulator IC platform. This IC platform provides several power management functions critical for MEMS including high voltage generation, control and analog/digital/RF circuits... The technology also includes a waferlevel-package dielectric encapsulation process for the MEMS device which is hermetic and compatible with low cost packaging processes.

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E-/D-pHEMT technology for wireless components

Cited by 12 publications

References 3 publications

High linearity-wideband PHEMT Darlington amplifier with +40 dBm IP3

High linearity-wideband PHEMT Darlington amplifier with +40 dBm IP3

A 1mm<sup>2</sup> two stage LNA and SP2T switch RFIC FEM for WLAN 802.11a applications

Integrated Mems Switch Technology on Soi-Cmos

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