E-beam induced X-ray mask repair with optimized gas nozzle geometry

Kohlmann, K.; Thiemann, Matthias; Brünger, W.

doi:10.1016/0167-9317(91)90093-s

Cited by 42 publications

(24 citation statements)

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“…The flux value accessible to the FEB/FIB is 60.15F. Molecular flow conditions were also found to fit best quantitative profile measurements on deposits obtained from Co 2 (CO) 8 with normal incidence, see Fig. 3a.…”

Section: Monte Carlo Simulationsmentioning

confidence: 90%

“…(1). The inner diameter of the tube is D = 600 lm (D = 424 lm for Co 2 (CO) 8 much larger than tube dimensions such that only molecule-tube collisions take place. However, the mean free path of 380 lm for Rh 2 Cl 2 (PF 3 ) 4 reported in Table 1 is smaller than the tube dimensions.…”

Section: Monte Carlo Simulationsmentioning

confidence: 99%

“…The average precursor flux arriving on the substrate as a function of vertical microtube distance was measured using stagnation tubes [7] and as a function of temperature using quartz microbalances [1]. A micromechanical gas sensor together with a geometrical approach to estimate the average precursor flux on the substrate was reported in [8].…”

Section: Introductionmentioning

confidence: 99%

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Measurement and simulation of impinging precursor molecule distribution in focused particle beam deposition/etch systems

Utke

Friedli

Amorosi

et al. 2006

Microelectronic Engineering

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Section: Monte Carlo Simulationsmentioning

confidence: 90%

Section: Monte Carlo Simulationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Measurement and simulation of impinging precursor molecule distribution in focused particle beam deposition/etch systems

Utke

Friedli

Amorosi

et al. 2006

Microelectronic Engineering

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“…It has been shown that operating gas delivery nozzles carried by the NanoBot ® nanomanipulator can result in optimized localized precursor pressure and flux at reduced chamber pressures. Because it is impossible to directly measure the localized precursor pressure at the sample the local pressure has been computed by knowing the chamber pressure and the gas nozzle geometry using a program that initially developed by Kohlmann et al [1]. Support by the National Science Foundation is acknowledged [2].…”

mentioning

confidence: 99%

“…Because it is impossible to directly measure the localized precursor pressure at the sample the local pressure has been computed by knowing the chamber pressure and the gas nozzle geometry using a program that initially developed by Kohlmann et al [1]. Support by the National Science Foundation is acknowledged [2].…”

mentioning

confidence: 99%

Vapor Phase Editing of Carbon Nanotube Based Nanodevices: Use of the NanoBot^® Nanomanipulator with Gas Delivery

Mancevski

Rack

2011

Microsc Microanal

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A vapor phase editing process is described for (1) precise nanometer-scale linear etching (i.e., cutting) operations, including nanotube cutting, shortening, cleaning, and other individual carbon nanotube (CNT) operations, and (2) precise micron-scale area etching operations, including cleaning entire areas of unwanted nanotube growth. Applications that motivated the work include fabrication and repair of carbon nanotube based scanning probe microscope tips and carbon nanotube based electron emitters. It has been shown that operating gas delivery nozzles carried by the NanoBot ® nanomanipulator can result in optimized localized precursor pressure and flux at reduced chamber pressures. Because it is impossible to directly measure the localized precursor pressure at the sample the local pressure has been computed by knowing the chamber pressure and the gas nozzle geometry using a program that initially developed by Kohlmann et al. [1]. Support by the National Science Foundation is acknowledged [2]. Figure 1 shows the use of a box scan to successfully cut a CNT laying on a surface. The CNT etching was performed using full screen TV scan at 500 kx magnification. In this example the CNT was cut in 11 seconds. Figures 2a (before) and 2b (after) show the use of a line scan to cut a set of suspended CNTs with a great precision and Figures 2c (before) and 2d (after) show the use of a box scan to successfully cut a pair of free standing CNTs that may be connected in a loop at the free end. Figure 3 shows the visualization of the water vapor flow from the nozzle as the nozzle-sample gap was reduced. The flow lines are explained as a result of electron beam induced ionization of the water molecules. The results of the tests show that with this SEM CNTs could not be imaged at beam energies of more than 20 keV but CNT imaging was fine for lower beam energies. The larger beam energies also introduced sample charging and drift. Effective CNT etching required stable imaging for several minutes at high magnification. An important conclusion is that the CNT etching time and rate improved for a smaller gap between the sample and the nozzle, as shown in Figure 4 (left). A trend was also observed in which the probe current decreased for a smaller gap, as shown in Figure 4 (right). The change in the probe current as a function of distance is interpreted as ionization and competitive positive current flow which increases with decreased spacing because of the enhanced local pressure. Because the smaller nozzle distance shows faster etching rates and lower sample currents, the results from Figure 4 lead to a conclusion that increased local pressure is responsible for the increased etching rate.

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Tungsten Diselenide Patterning and Nanoribbon Formation by Gas‐Assisted Focused‐Helium‐Ion‐Beam‐Induced Etching

et al. 2017

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A gas‐assisted focused‐helium‐ion beam‐induced etching (FIBIE) process is introduced, which accelerates direct‐write patterning of WSe2 relative to standard ion milling. The etching process utilizes the XeF2 precursor molecule to provide a chemical assist for enhanced material removal relative to ion sputtering. The FIBIE process enables high‐fidelity patterning of WSe2 with doses 5× lower than standard He+ milling. This enables the formation of high‐resolution WSe2 nanoribbons with dimensions less than 10 nm. The WSe2 nanoribbons demonstrate high Raman anisotropy and nanoribbon electrical measurements are reported for the first time. The normalized on‐currents of field‐effect transistors reveal that the electron and hole currents are both suppressed and scale with the nanoribbon width, with the electron transport experiencing more degradation. However, on‐currents of nanoribbons created by the FIBIE process remain orders of magnitude greater than nanoribbons formed by standard He+ milling. Scanning transmission electron microscopy and complementary Monte Carlo ion–solid simulations reveal that the reduced currents are partially due to ion‐induced damage in the WSe2.

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E-beam induced X-ray mask repair with optimized gas nozzle geometry

Cited by 42 publications

References 1 publication

Measurement and simulation of impinging precursor molecule distribution in focused particle beam deposition/etch systems

Measurement and simulation of impinging precursor molecule distribution in focused particle beam deposition/etch systems

Vapor Phase Editing of Carbon Nanotube Based Nanodevices: Use of the NanoBot^® Nanomanipulator with Gas Delivery

Tungsten Diselenide Patterning and Nanoribbon Formation by Gas‐Assisted Focused‐Helium‐Ion‐Beam‐Induced Etching

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E-beam induced X-ray mask repair with optimized gas nozzle geometry

Cited by 42 publications

References 1 publication

Measurement and simulation of impinging precursor molecule distribution in focused particle beam deposition/etch systems

Measurement and simulation of impinging precursor molecule distribution in focused particle beam deposition/etch systems

Vapor Phase Editing of Carbon Nanotube Based Nanodevices: Use of the NanoBot® Nanomanipulator with Gas Delivery

Tungsten Diselenide Patterning and Nanoribbon Formation by Gas‐Assisted Focused‐Helium‐Ion‐Beam‐Induced Etching

Contact Info

Product

Resources

About

Vapor Phase Editing of Carbon Nanotube Based Nanodevices: Use of the NanoBot^® Nanomanipulator with Gas Delivery