Dysgenesis of the corpus callosum

High performance GZO/p-Si heterojunction diodes fabricated by reactive co-sputtering of Zn and GaAs through the control of GZO layer thickness

“…Thus, the significantly smaller Ga/Zn ratio seen in 500 nm or lower thickness films is attributed to the possible loss of Ga by diffusion into SiO 2 /Si, owing to its high diffusivity. 68 …”