Direct
fluorination utilizing F2/N2 was confirmed
to be one of the most efficient approaches to decorate graphene. The
conventional opinion holds the view that direct fluorination is a
molecular fluorination process, which often makes for the preparation
of fluorinated graphene (FG) with heterogenous fluorine distribution.
Herein, a fluorination strategy with an atomic fluorination mechanism
was developed to modify graphene through thermal predissociation of
molecular fluorine into atomic fluorine. By means of theoretical simulation,
the thermal dissociation process of F2 was disclosed, and
dissociation temperature was determined to be about 140–180
°C. Consequently, an ingenious thermal annealing at 180 °C
was employed to splitting F2 into fluorine atoms before
the fluorination reaction. Distinguished from the traditional molecular
fluorination, atomic fluorination using fluorine atoms enables the
preparation of FG with a higher fluorination degree and relatively
homogeneous fluorine distribution because of the zero-energy barrier
reaction, which was validated by aberration-corrected transmission
electron microscopy directly. Furthermore, FG with homogeneous fluorine
distribution possesses several advantages over the heterogenous fluorine
distribution samples including higher thermal stability, higher thermal
conductivity, and better electrical insulation, thereby demonstrating
the possibility of their application in the field of thermal conduction
and electrical insulation for microelectronics. We believe that this
unique fluorination approach and corresponding mechanism can be extended
to other carbon materials.