Dynamics of resistance switching induced by charge carrier fluence

Buh, Gyoung-Ho; Hwang, Inrok; Park, Bae Ho

doi:10.1063/1.3489938

Cited by 2 publications

(2 citation statements)

References 17 publications

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“…4(a)]. 17,18 Even though the CFs are formed in the metal-rich region, non-connected CFs in the oxygen-rich region induce monostable threshold switching at low voltage in a thick NbO x film. By applying high voltage stress near 3.5 V, CFs in the oxygen-rich region are easily connected with the expanded CFs in the metal-rich region resulting in transition to bistable memory switching.…”

Section: -2mentioning

confidence: 99%

Coexistence of bi-stable memory and mono-stable threshold resistance switching phenomena in amorphous NbOx films

Bae

Hwang

Jeong

et al. 2012

Applied Physics Letters

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Both bi-stable memory and mono-stable threshold switching are observed in amorphous NbOx films. In addition, the transition between memory and threshold switching can be induced by changing external electrical stress. Raman spectroscopy and transmission electron microscope data show that the NbOx film is self-assembled into a layered structure consisting of a top metal-rich region and a bottom oxygen-rich region. The volume ratio of the two regions depends on the film thickness. Our experimental results suggest that different characteristics of conducting filaments in the two regions result in thickness dependence of switching types and the transition between memory and threshold switching.

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Section: -2mentioning

confidence: 99%

Coexistence of bi-stable memory and mono-stable threshold resistance switching phenomena in amorphous NbOx films

Bae

Hwang

Jeong

et al. 2012

Applied Physics Letters

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“…Therefore, local defect could have a crucial role on the whole dielectric layer although local point is a little portion of the whole dielectric layer. 19 As shown in Fig. 2(b), forming voltage of a Pt/ZrO 2 /Ir memory cell decreases as RMS roughness value of its ZrO 2 film increases.…”

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confidence: 92%

EFFECTS OF ARGON⁺ ION BOMBARDMENT ON A PLATINUM/ZIRCONIUM DIOXIDE/IRIDIUM RESISTIVE SWITCHING MEMORY CELL

Hwang

Choi

et al. 2011

Funct. Mater. Lett.

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We have fabricated Pt/ZrO 2 /Ir memory cells with pristine and Ar + ion bombarded ZrO 2 films, which show unipolar resistive switching behaviors. Ar + ion bombardment induces change in surface morphology and chemical states of ZrO 2 films. We have found that forming voltage significantly decreases in a Pt/ZrO 2 /Ir memory cell whose Ar + ion bombarded ZrO 2 film shows oxygen vacancy like defects and the largest root-mean-square (RMS) roughness. It seems that forming process may be more easily induced in an Ar + ion bombarded ZrO 2 film with higher RMS roughness mainly due to locally enhanced electric field in a region with oxygen vacancy like defects.Resistive switching (RS) memory using oxide material has been widely studied due to its outstanding benefits -simple device structure, high density, high speed, low power, and so on -for the application in next generation nonvolatile memory. In particular, it has been reported that 3-dimensional cross-point structure is compatible with unipolar RS materials whose reset switching from low resistance state (LRS) to high resistance state (HRS) and set switching from HRS to LRS are induced by external voltages with same polarity. Although the detailed explanations are unclear, there is a general agreement that unipolar RS phenomena may result from the formation and rupture of filamentary conducting path 1,2 through Joule heating 3,4 or migration of ions under an applied electric field. 5−7 Therefore, it is expected that unipolar RS behaviors can be modified by local change where filamentary path is formed.Before reproducible and bistable RS process, each memory cell has to experience a forming process caused by an electric field in a unipolar switching case. During the forming process, soft breakdown can easily form a percolative network of the conducting path, consisting of crystalline defects and/or grain boundaries in memory devices. 1,2,8 If the forming voltage is high, the device may be easily damaged and broken by the high voltage and accompanied high current and also * , † Corresponding Authors. need a huge operation power. Therefore, it has been tried to decrease the forming voltage 9−11 and thus to save the power consumption and to prevent the breakdown during the forming process. However, it has been hard to control the forming voltage artificially since forming process randomly takes place in crystalline defect, grain boundary or weak point. Among many oxide materials, ZrO 2 thin films showing RS phenomena has a good retention property and a high on/off ratio than other binary transition metal oxide materials. 12 Because of its simple chemical composition, high breakdown field and superior thermal stability, ZrO 2 thins films are promising candidates for nonvolatile memory devices using RS phenomena. In addition, it has been reported that phase transformations can be induced in ZrO x thin films with Ar + ions bombardment of relatively low energy and the oxidation state of zirconium increases with depth from the film surface. Treated thin layers are related wit...

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Dynamics of resistance switching induced by charge carrier fluence

Cited by 2 publications

References 17 publications

Coexistence of bi-stable memory and mono-stable threshold resistance switching phenomena in amorphous NbOx films

Coexistence of bi-stable memory and mono-stable threshold resistance switching phenomena in amorphous NbOx films

EFFECTS OF ARGON⁺ ION BOMBARDMENT ON A PLATINUM/ZIRCONIUM DIOXIDE/IRIDIUM RESISTIVE SWITCHING MEMORY CELL

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Dynamics of resistance switching induced by charge carrier fluence

Cited by 2 publications

References 17 publications

Coexistence of bi-stable memory and mono-stable threshold resistance switching phenomena in amorphous NbOx films

Coexistence of bi-stable memory and mono-stable threshold resistance switching phenomena in amorphous NbOx films

EFFECTS OF ARGON+ ION BOMBARDMENT ON A PLATINUM/ZIRCONIUM DIOXIDE/IRIDIUM RESISTIVE SWITCHING MEMORY CELL

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EFFECTS OF ARGON⁺ ION BOMBARDMENT ON A PLATINUM/ZIRCONIUM DIOXIDE/IRIDIUM RESISTIVE SWITCHING MEMORY CELL