Dynamics of NF3 in a condensed film on Au(111) as studied by electron-stimulated desorption

Rzeznicka, Izabela Irena; Lee, Junseok; Yates, John T.

doi:10.1016/j.susc.2006.07.014

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Cited by 6 publications

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“…Despite these favorable characteristics, NF 3 -mediated EBIE has previously not been demonstrated, likely due to poor surface coverage at room temperature. Weak physisorption has been observed on platinum, gold (desorption energy = 0.219 eV) and ruthenium . Standard theory of gas-mediated electron beam processing ,,− predicts that the low NF 3 adsorption energies (on the order of 200 meV) give rise to very low etch rates at and near room temperature (see the Supporting Information, section S3).…”

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confidence: 99%

Cryogenic Electron Beam Induced Chemical Etching

Martin

Toth

2014

ACS Appl. Mater. Interfaces

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Cryogenic cooling is used to enable efficient, gas-mediated electron beam induced etching (EBIE) in cases where the etch rate is negligible at room and elevated substrate temperatures. The process is demonstrated using nitrogen trifluoride (NF3) as the etch precursor, and Si, SiO2, SiC, and Si3N4 as the materials volatilized by an electron beam. Cryogenic cooling broadens the range of precursors that can be used for EBIE, and enables high-resolution, deterministic etching of materials that are volatilized spontaneously by conventional etch precursors as demonstrated here by NF3 and XeF2 EBIE of silicon.

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