Dynamics of nanosecond laser annealing of silicon

Pilipovich, V. A.; Malevich, V. L.; Ивлев, Г. Д.; Zhidkov, V. V.

doi:10.1007/bf00871878

Cited by 11 publications

(14 citation statements)

References 5 publications

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“…The reason for the discrepancy between the simulation results and the experimental data was due to the fact that the solution of the Stefan problem given in Ref. [10] was obtained in the one-dimensional approximation, i.e. the phase transition front was assumed to be perfectly plane.…”

Section: Resultsmentioning

confidence: 95%

“…The absorption coefficient of the probe radiation was ~ 10 6 cm" 1 in the melt (regarded as a liquid metal) and the rise of R to its quasisteady maximum required formation of a molten layer of just ~20 nm thick. Simulation of this specific experimental regime [10] predicted an initial melting rate of ~20 m s~' and the final crystallisation rate of ~ 3 m s"' when the radiation energy density was 2.5 J cm" 2 . Consequently, the rise time of R should be ~ 1 ns and its decay time should be less than 10 ns.…”

Section: Resultsmentioning

confidence: 95%

“…We can then use the results of Ref. [10] to estimate the variation over the irradiation spot of the moments of the onset of melting and of completion of the crystallisation process. The estimates give approximately ±3.5 ns and 15 ns, respectively, in satisfactory agreement with the experimental results.…”

Section: Resultsmentioning

confidence: 99%

“…We calculated / at each time step in the course of numerical solution, in accordance with the algorithm given in Ref. [10], of a nonlinear one-dimensional heat conduction equation. We used the data given in Refs [14,15] on the optical parameters of single-crystal and liquid silicon, respectively.…”

Section: Resultsmentioning

confidence: 99%

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Melting and solidification of the surface layer of single-crystal silicon heated by pulsed laser radiation

1995

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Please note that terms and conditions apply. Melting and solidification of the surface layer of single-crystal silicon heated by pulsed laser radiation View the table of contents for this issue, or go to the journal homepage for more 1995 Quantum Electron. 25 774 Abstract. The methods of optical probing and of detection of pulsed thermal radiation were used in a study of crystal <-> melt phase transitions in silicon heated by nanosecond ruby laser radiation. An electron-diffraction investigation was made of the structural state of the semiconductor surface. Inhomogeneity of the phase transitions was demonstrated experimentally. Local variations of the melting and crystallisation rates result in roughness of the phase boundary. Probing of this boundary through the base revealed deviations from the specular reflection of the probe beam. A numerical solution of the Stefan problem provided a description of the dynamics of changes in the reflected radiation flux, governed mainly by the transient optical absorption in the heated layer of a single crystal. A possible reduction in the supercooling of the molten surface during epitaxial crystallisation was insignificant. The presence on the irradiated surface of foreign micron-size particles could result in local lateral crystallisation of the melt and formation of unoriented silicon inclusions in the thin surface layer of the single crystal.

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Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Melting and solidification of the surface layer of single-crystal silicon heated by pulsed laser radiation

1995

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“…At the same time, the measurements results don't agree with calculated data, especially if W 2 JIcm2. The calculation has been carried out by numerical solving the Stefan problem in one-dimensional approximation [9] with taking into account the temperature dependencies of thermal and optical parameters of c-Si and 1-Si. We assume that under these conditions there is possible an additional (convective) heat transfer from the surface layer (where the laser radiation is absorbed) to the melting front.…”

Section: Resultsmentioning

confidence: 99%

<title>Time-resolved temperature and reflectivity measurements of nanosecond laser-induced melting and crystallization of silicon</title>

Ивлев¹,

Gatskevich²,

Sharaev³

2001

SPIE Proceedings

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Crystal 4-> liquid phase transitions induced in monocrystalline silicon surface layers by pulsed irradiation of a ruby laser have been studied using in situ methods and also by numerical modeling the laser -induced thermal processes.Hydrodynamic phenomena and convective heat transfer from the liquid surface absorbing laser radiation to the melt-crystal interface are possible at the melting stage. During epitaxial crystallization, the undercooling of liquid Si at <1 1 1> crystal growth direction is '-15 K more than the same for <100> and <1 10> directions. Two kinetics regimes characterize the epitaxial process to various directions. This regimes differ not only in undercooling, but also in morphology of the liquidsolid interface which can be atomically smooth or rough.

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Influence of the Laser Pulse Annealing of the Silicon Implanted with Indium and Arsenic Ions on its Optical and Structural Properties

Komarov,

Mil’chanin,

Parchomenko

et al. 2024

J Eng Phys Thermophy

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Dynamics of nanosecond laser annealing of silicon

Cited by 11 publications

References 5 publications

Melting and solidification of the surface layer of single-crystal silicon heated by pulsed laser radiation

Melting and solidification of the surface layer of single-crystal silicon heated by pulsed laser radiation

<title>Time-resolved temperature and reflectivity measurements of nanosecond laser-induced melting and crystallization of silicon</title>

Influence of the Laser Pulse Annealing of the Silicon Implanted with Indium and Arsenic Ions on its Optical and Structural Properties

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