Dynamics of modification of Ni/n-GaN Schottky barrier diodes irradiated at low temperature by 200 MeV Ag 14+ ions

Semicond. Sci. Technol.

Dhillon

Verma³

et al. 2018

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In-situ measurements such as deep level transient spectroscopy (DLTS) provide reliable information for the identification of defects in electronic devices. For GaN-based devices exposed to swift heavy ion (SHI) irradiation, in situ DLTS investigations are not reported. The defect characterization of irradiated devices has significant relevance in the reliability testing of devices for space applications, detectors for high energy physics experiments, nuclear radiation environments near reactors and for device engineers to design better and high-performance electronic components. The present work reports on the identification of defects by employing in situ DLTS in Pt/n-GaN Schottky devices before and after SHI irradiation by 200 MeV 107 Ag 14+ ions at various fluences in the range of 1×10 10 to 1×10 11 ions cm −2 . For pristine or un-irradiated diodes, trap levels at 0.173, 0.504, 0.283 and 1.012 eV below the conduction edge are observed which are reported as growth-related defects in GaN. The ion beam introduces more electron and hole traps in the bandgap. A significant increase in interface state density was instigated by irradiation which practically pinned the Schottky barrier height at 0.73 eV at an experimental time scale. The origin of these defects was compared and discussed based on literature.

Section: Resultscontrasting

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Identification of swift heavy ion induced defects in Pt/n-GaN Schottky diodes by in-situ deep level transient spectroscopy

Semicond. Sci. Technol.

Dhillon

Verma³

et al. 2018

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“…Recently, A. Kumar et al have reported that heavy ion irradiation induces the formation of isolated defect clusters which affect electrical properties [28][29][30]. Therefore, a better understanding of the loss of performance induced by irradiation requires investigating locally, at the atomic scale, the induced damage.…”

Section: Introductionmentioning

confidence: 99%

Fullerene irradiation leading to track formation enclosing nitrogen bubbles in GaN material

et al. 2021

Gallium nitride was irradiated with fullerene projectiles having an electronic stopping power above the threshold required to promote ion track formation. The structural and chemical changes induced by fullerene irradiation were studied through Transmission Electron Microscopy (TEM). High resolution TEM inquiries were performed to identify the structural order along the ion tracks and the strain induced in the lattice neighboring the ion tracks. The TEM investigation pointed out local amorphization inside the whole tracks and High Resolution TEM studies in the track periphery evidence local stress in the wurtzite structure. Chemical investigations were carried out by STEM -Electron Energy Loss Spectroscopy (EELS) to describe the chemical order in the neighboring and inside the ion path. Ga/N stoichiometry is essentially maintained in the track core, whereas an oxidation is detected in the ion track, at the surface. Furthermore, the nitrogen k near-edge fine structure investigation reveals the encapsulation of nitrogen bubbles inside the ion tracks.

“…Despite substantial progress in GaN devices, fundamental issues continue to be addressed. [7][8][9] One of them is GaN's response to ionizing radiation because of high-power and high-temperature properties that are used in space-borne, highenergy material science and military applications. [10][11][12][13][14][15][16] The different types of radiations influencing the properties of the device by various mechanisms.…”

mentioning

confidence: 99%

Enhancement of Electrical Parameters of Ni/n-GaN SBDs under Remote and not In-flux Gamma Irradiation

Mariswamy²,

ECS J. Solid State Sci. Technol.

et al. 2020

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Remote and not in-flux gamma irradiation effects have been examined on the cumulative dose ranges from 250 Gy to 1 kGy by current-voltage (I–V) and capacitance-voltage (C-V) characteristics for Ni/n-GaN Schottky barrier diodes (SBDs). The interface and charge transport properties of Ni/n-GaN SBDs are significantly changed after gamma irradiation. In addition, the reverse current conduction mechanism indicates that the emission of Poole-Frenkel is dominant in lower voltages and Schottky emission for different doses at the higher voltage. The electrical parameters, such as barrier height and series resistance, decreases significantly at 500 Gy. Due to the internal irradiation of Compton electrons caused by primary gamma photons, low-dose gamma irradiation reveals the enhancement of device characteristics. Nonetheless, for higher doses of gamma irradiation above 500 Gy, degradation of Ni/n-GaN characteristics was observed.