Dynamics of ionized poly(4-hydroxystyrene)-type resist polymer with tert-butoxycarbonyl-protecting group

Abstract

Resist materials used for micro- and nano-patterning are formed by radiation-induced chemical reactions, with the shortening of wavelengths of the exposure light sources in lithography systems. The most widely used patterning materials in industrial lithography are chemically amplified resists (CAR). Understanding the deprotonation mechanism of ionized polymers (radical cations) is important for acid generation in CARs. In this study, the dynamics of radical cations in poly(4-hydroxystyrene) (PHS)–type resist polymers, partially and totally protected by tert-butoxycarbonyl (t-BOC) groups, are investigated using a combination of electron pulse radiolysis experiments, acid yield measurements, and quantum chemical calculations. The t-BOC(oxy) group exhibits p-electron-donating behavior in the monomer cation but changes to electron-accepting behavior in the polymer cation, owing to the interaction between substituents. The destabilization of radical cations due to decreased intramolecular charge resonance may contribute to the high deprotonation efficiency of t-BOC-capped PHS polymers.