Dynamics of Hole Singlet-Triplet Qubits with Large 
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-Factor Differences

Jirovec, Daniel; Mutter, Philipp M.; Hofmann, Andrea; Crippa, Alessandro; Rychetsky, Marek; Craig, David L; Kukučka, Josip; Martins, Frederico Rodrigues; Ballabio, Andrea; Ares, Natalia; Chrastina, Daniel; Isella, Giovanni; Burkard, Guido; Katsaros, Georgios

doi:10.1103/physrevlett.128.126803

Cited by 32 publications

(20 citation statements)

References 30 publications

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“…This study of coherent singlet-triplet oscillations also led to a full characterization of the device. Site dependent and anisotropic g-factors were found, with values g z ≃ 7 and g x ≃ 0.26 for the left dot and g z ≃ 5 and g x ≃ −0.16 for the right dot [56]. As previously shown in [145], the difference in g z -factors can be modulated through the center gate, from ∆g z ∼ 1.5 to above 2.2.…”

Section: Singlet-triplet Qubitssupporting

confidence: 68%

“…A detailed theoretical analysis of the g-factor, starting from the Luttinger Hamiltonian (equation ( 1)), finds a contribution ∝ ω x − ω y , which is in agreement with equation (9). The interpretation given in [56] is that, since the two quantum dots are elliptical and have major axes that are approximately perpendicular to each other, the corrections to the in-plane g-factors can be comparable to or larger than 3 q. Moreover, these corrections will have opposite sign for the two dots.…”

Section: The G-factor Of Single Holessupporting

confidence: 65%

“…Since equation (8) gives small values of g x,y , corrections such as equation ( 9) can be particularly relevant. A good example is a recent measurement in a Ge double quantum dot [56]. While 3q ≃ 0.18 in Ge, the measured in-plane g-factors were ≃ 0.26 and −0.16 for the left and right dots, respectively.…”

Section: The G-factor Of Single Holesmentioning

confidence: 97%

“…The coherence time can be further prolonged to T CPMG 2 ≃ 135 µs, for N π = 512. Furthermore, the interplay between S − T 0 and S − T − coherent oscillations in different regimes was analyzed by [56]. This study of coherent singlet-triplet oscillations also led to a full characterization of the device.…”

Section: Singlet-triplet Qubitsmentioning

confidence: 99%

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Recent advances in hole-spin qubits

Fang

Philippopoulos

Culcer

et al. 2023

Mater. Quantum. Technol.

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In recent years, hole-spin qubits based on semiconductor quantum dots have advanced at a rapid pace. We first review the main potential advantages of these hole-spin qubits with respect to their electron-spin counterparts, and give a general theoretical framework describing them. The basic features of spin-orbit coupling and hyperfine interaction in the valence band are discussed, together with consequences on coherence and spin manipulation. In the second part of the article we provide a survey of experimental realizations, which spans a relatively broad spectrum of devices based on GaAs, Si, or Si/Ge heterostructures. We conclude with a brief outlook.

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Section: Singlet-triplet Qubitssupporting

confidence: 68%

Section: The G-factor Of Single Holessupporting

confidence: 65%

Section: The G-factor Of Single Holesmentioning

confidence: 97%

Section: Singlet-triplet Qubitsmentioning

confidence: 99%

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Recent advances in hole-spin qubits

Fang

Philippopoulos

Culcer

et al. 2023

Mater. Quantum. Technol.

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“…Furthermore, holes in germanium have inherently strong-spin orbit coupling [19] and can achieve long quantum coherence due to the suppressed hyperfine interaction [20] and the possibility of isotopic purification into a nuclear spin-free material [21]. Building on these advantages, holes in Ge have advanced semiconductors spin qubits, progressing in only three years from uniform and well-controlled quantum dots [22], to single hole qubits [23] with long relaxation times [24], singlettriplet qubits [25,26], fast two-qubit logic [27], universal operation on a 2 × 2 qubit array [28], and simultaneous qubit driving at the fault-tolerant threshold [29].…”

mentioning

confidence: 99%

Hard superconducting gap in a high-mobility semiconductor

Tosato¹,

Levajac²,

Wang³

et al. 2022

Preprint

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The co-integration of spin, superconducting and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility planar germanium is a front-runner semiconductor for building quantum processors with spin-qubits, but the lack of a pristine interface with a superconductor has slowed progress with hybrid superconductorsemiconductor devices. Here we take this step and demonstrate a low-disorder, oxide-free interface between high-mobility planar germanium and a germanosilicide parent superconductor. This superconducting contact is formed by the thermally-activated solid phase reaction between a metal (Pt) and the semiconductor heterostructure (Ge/SiGe). Electrical characterization reveals near-unity transparency in Josephson junctions, hard induced superconducting gap in quantum point contacts, phase control of a Josephson junction in a superconducting quantum interference device, and a superconducting to insulating transition in gated two-dimensional superconductor-semiconductor arrays. These results expand the quantum technology toolbox in germanium and provide new avenues for exploring monolithic superconductor-semiconductor quantum circuits towards scalable quantum information processing.

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Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Liu,

Guan,

Luo

et al. 2024

Adv Funct Materials

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Quantum computing offers the potential to revolutionize information processing by exploiting the principles of quantum mechanics. Among the diverse quantum bit (qubit) technologies, silicon‐based semiconductor spin qubits have emerged as a promising contender due to their potential scalability and compatibility with existing semiconductor technologies. In this paper, the latest developments of spin qubits in gate‐defined semiconducting nanostructures made of silicon and germanium, starting from the basic properties of electron and hole states in group‐IV semiconductors, are reviewed. Specifically, various nanostructures that exploit their unique microscopic properties for qubit implementations, elaborating on the advances and challenges in experiments, are discussed. Strategies for enhancing qubit performance, such as designing new nanostructures and identifying suitable operating points, particularly those involving the valleys of electron qubits and the heavy‐hole–light‐hole mixing of hole qubits, are also highlighted. This comprehensive review thus provides valuable insights into the current state‐of‐the‐art in semiconductor quantum computing and suggests avenues for future research.

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Dynamics of Hole Singlet-Triplet Qubits with Large g -Factor Differences

Cited by 32 publications

References 30 publications

Recent advances in hole-spin qubits

Recent advances in hole-spin qubits

Hard superconducting gap in a high-mobility semiconductor

Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

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