2011
DOI: 10.1007/s10853-010-5233-6
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Dynamics of grain boundaries under applied mechanical stress

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Cited by 112 publications
(87 citation statements)
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“…The presence of equiaxed and dislocation free (sub)grains with thin smooth boundaries (figure 1f) suggests the development of recovery and even recrystallization processes that seems to be quite unusual for such a low temperature. However, high stresses can in some cases compensate for the insufficient thermal activation and induce local migration of grain boundaries and recrystallization [8][9][10].…”
Section: Microstructure Evolution In Timentioning
confidence: 99%
“…The presence of equiaxed and dislocation free (sub)grains with thin smooth boundaries (figure 1f) suggests the development of recovery and even recrystallization processes that seems to be quite unusual for such a low temperature. However, high stresses can in some cases compensate for the insufficient thermal activation and induce local migration of grain boundaries and recrystallization [8][9][10].…”
Section: Microstructure Evolution In Timentioning
confidence: 99%
“…In contrast, a low angle dry GB with intact solid bridges in between isolated dislocations with premelted cores would be expected to support shear more like a static solid. However, both theoretical [32][33][34][35][36] and experimental [37][38][39] studies over the last decade have shown that a dry GB generically moves normal to itself under an applied shear stress. This motion coupled to shear, commonly referred to as "coupled motion", is characterized by a relationship v = βv n between the translation velocity of the two grains parallel to the GB plane, v , and the GB velocity normal to this plane, v n .…”
Section: Introductionmentioning
confidence: 99%
“…The formation of large facetted crystals during grain growth and dewetting of thin films during hydrogenation of Mg also suggests the importance of stress-induced coarsening to thin-film stability in the presence of a phase change. 106 Research on modeling and measuring stress generation and relaxation in thin films by competing processes during thin-film formation, 115 thermal cycling, 116 applied stresses, 107,117 or isothermal stress generation processes, such as intermetallic formation during room-temperature annealing of Sn films on Cu, [118][119][120][121] is revealing the role of microstructural heterogeneity and crystalline anisotropy on the response of different thin films to stress. Further progress will require a more detailed understanding of how grain boundaries and interfaces migrate and respond to applied stresses, the mechanisms and conditions for coupling stress and grain boundary motion, and the ability of grain boundaries and surfaces to act as vacancy sources and sinks for diffusional creep.…”
Section: Functionality and Control Of Materials Far From Equilibriummentioning
confidence: 99%