Dynamics of formation of the mosaic structure of porous silicon during prolonged anodic etching in electrolytes with an internal current source

Тыныштыкбаев, К. Б.; Ryabikin, Yu. A.; Mit, K.A.; Rakymetov, B. A.; Айтмукан, Т.

doi:10.1134/s1063783411080312

Cited by 7 publications

(1 citation statement)

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“…As will be shown on the example of self-organization of the MS por-Si, consisting of 3D islets ensemble of Si-NCs por-Si [1,4,5], in addition to commonly accepted elastically-deformation forces [2,3], the additional action of defectively-deformative [6] and capillary-fluctuation [7,8] forces must be considered.…”

Section: Introductionmentioning

confidence: 99%

Self-Organizing Processes in Semiconductor Materials Science on the Example of Nanostructuring of por-Si

Тыныштыкбаев¹,

Айтмукан²,

Issova³

et al. 2013

MSA

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Self-organization processes in semiconductor materials on the example of nanostructuring of por-Si at long anodic etching of p-type Si in the electrolyte with internal source of the current are shown. In conditions of a “soft” etching of the Si point defects are formed and in the subsequently occurs their spatial-temporal ordering. This leads to the ordering pores and the nanostructuring of por-Si. Self-organization mechanism of Si nanocrystallites islets is described by the effects of the elastically-deformative, defectively-deformative and capillary-fluctuation forces.

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