Dynamical spin susceptibility of a spin-valley half-metal

Khokhlov, D. A.; Rakhmanov, A. L.; Rozhkov, A. V.; Sboychakov, A. O.

doi:10.1103/physrevb.101.235141

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Cited by 7 publications

(2 citation statements)

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“…This suggests that at small q, two plasmonic modes may be observed in the Electron Energy Loss Spectroscopy. The inter-band transitions in the spin susceptibility of the spin-valley half-metal was studied in [45]. For the inter-band optical conductivity, it is connected to the joint density of states for Reσ(q = 0, ω), [46] or the joint spectral function for Reσ(q = 0, ω).…”

Section: Resultsmentioning

confidence: 99%

Nonlocal optical conductivity of Fermi surface nesting materials

Huang¹,

Xiao²,

Huang³

et al. 2022

Preprint

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Section: Resultsmentioning

confidence: 99%

Nonlocal optical conductivity of Fermi surface nesting materials

Huang¹,

Xiao²,

Huang³

et al. 2022

Preprint

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“…One must remember that the HM state realized in our model upon sufficiently strong doping is not the conventional HM [1,2] whose Fermi surface demonstrates perfect spin polarization. Instead, we now have a spin-flavor HM [33][34][35][36], with perfect spin-flavor polarization of the Fermi surface. This means that the electron (hole) single-particle states reaching the Fermi energy have their spin projection being equal to σ (to σ).…”

mentioning

confidence: 99%

Half-metal and other fractional metal phases in doped AB bilayer graphene

Rakhmanov¹,

Rozhkov²,

Sboychakov³

et al. 2023

Preprint

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We theoretically argue that, in doped AB bilayer graphene, the electron-electron coupling can give rise to the spontaneous formation of fractional metal phases. These states, being generalizations of a more common half-metal, have a Fermi surface that is perfectly polarized not only in terms of a spin-related quantum number, but also in terms of the valley index. The proposed mechanism assumes that the ground state of undoped bilayer graphene is a spin density wave insulator, with a finite gap in the single-electron spectrum. Upon doping, the insulator is destroyed, and replaced by a fractional metal phase. As doping increases, transitions between various types of fractional metal (half-metal, quarter-metal, etc.) are triggered. Our findings are consistent with recent experiments on doped AB bilayer graphene, in which a cascade of phase transitions between different isospin states was observed.

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