Dynamic strain-induced giant electroresistance and erasing effect in ultrathin ferroelectric tunnel-junction memory

Yau, Hei-Man; Xi, Zhongnan; Chen, Xinxin; Wen, Zheng; Wu, Ge

doi:10.1103/physrevb.95.214304

Cited by 19 publications

(11 citation statements)

References 45 publications

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“…Recently, the ferroelectric-driven resistance switching has been proved experimentally in the Pt/BTO/NbSTO tunnel junctions by studying the junction transport as functions of temperature and strain, in which the resistive memory effect decreases and tends to vanish with decreasing polarization of the BTO barrier. 42,43 ■ ASSOCIATED CONTENT * S Supporting Information…”

Section: Discussionmentioning

confidence: 99%

Nondestructive Readout Complementary Resistive Switches Based on Ferroelectric Tunnel Junctions

Chen

Wen

2018

ACS Appl. Mater. Interfaces

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Recently, complementary resistive switches (CRSs) have attracted considerable attention because of the effective suppression of the sneak leakage that is an inherent problem of crossbar memory arrays. In this work, we propose a new CRS device enabling nondestructive readout based on back-to-back in-series Pt/BaTiO/Nb:SrTiO ferroelectric tunnel junctions (FTJs). The FTJ elements exhibit not only a nonvolatile resistance switching but also a typical diode-like transport in the high-resistance state (HRS) because of the ferroelectric enhancement on the Schottky barrier of the BaTiO/Nb:SrTiO interface. With the rectifying characteristic, the complementary HRS + LRS (low-resistance state) and LRS + HRS states can be well-distinguished and nondestructively read out by a subthreshold voltage. In addition, the sneak current is significantly suppressed in the Pt/BaTiO/Nb:SrTiO CRS crossbar array, and the maximum scaling size is increased by about 50 times, in comparison to the array constituted by only the single-FTJ devices. These results facilitate the design of high-performance resistive memories based on the crossbar architecture.

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Section: Discussionmentioning

confidence: 99%

Nondestructive Readout Complementary Resistive Switches Based on Ferroelectric Tunnel Junctions

Chen

Wen

2018

ACS Appl. Mater. Interfaces

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“…Nanoscale ferroelectric systems are a realm of fascination in condensed-matter physics and material community (Yang et al., 2017, Duan et al., 2006). Ferroelectric tunnel junction (FTJ), an ultrathin ferroelectric layer sandwiched by two metallic electrodes (Qin et al., 2016, Li et al., 2015, Pantel et al., 2012), attracts extensive interests as one of the promising ways to achieve semiconductor memories for its advantages of non-destructive readout (Garcia and Bibes, 2014, Scott, 2007, Li et al., 2017a, Garcia et al., 2009), high switching speed (Garcia and Bibes, 2014, Chanthbouala et al., 2012, Yoon et al., 2017), high endurance (Boyn et al., 2017), and simple structure (Guo et al., 2017, Yau et al., 2017). The basic concept of FTJs (called a polar switch at that time) was first proposed by Esaki et al.…”

Section: Introductionmentioning

confidence: 99%

Giant Electroresistance in Ferroionic Tunnel Junctions

Chen

et al. 2019

iScience

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Summary Oxide-based resistive switching devices, including ferroelectric tunnel junctions and resistance random access memory, are promising candidates for the next-generation non-volatile memory technology. In this work, we propose a ferroionic tunnel junction to realize a giant electroresistance. It functions as a ferroelectric tunnel junction at low resistance state and as a Schottky junction at high resistance state, due to interface engineering through the field-induced migration of oxygen vacancies. An extremely large electroresistance with ON/OFF ratios of 5.1×10 7 at room temperature and 2.1×10 9 at 10 K is achieved, using an ultrathin BaTiO 3-δ layer as the ferroelectric barrier and a semiconducting Nb-doped SrTiO 3 substrate as the bottom electrode. The results point toward an appealing way for the design of high-performance resistive switching devices based on ultrathin oxide heterostructures by ionic controlled interface engineering.

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“…It is very interesting that γ-GeSe does or does not have the spontaneous polarization depending on the stacking method of quadruple layers although each constituent quadruple layer does not have any polarization if it is isolated. This feature can bring in advantages for devices with ferroelectric/nonferroelectric junctions [54][55][56][57][58].…”

Section: Resultsmentioning

confidence: 99%

Quasiparticle band structures, spontaneous polarization, and spin-splitting in noncentrosymmetric few-layer and bulk $γ$-GeSe

Kim,

Choi

2021

Preprint

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Group-IV monochalcogenides have attracted much attention due to their potential of ferroelectric and multiferroic properties. Recently, centrosymmetric γ-phase GeSe in a double-layer honeycomb lattice has been theoretically predicted, but the synthesized γ-phase GeSe showed a noncentrosymmetric atomic structure, leading to the possibility of ferroelectricity and spin-splitting. Here, we study the quasiparticle band structures, spontaneous polarization, and spin-splitting in noncentrosymmetric γ-GeSe using density functional theory and GW calculations. Our results show that noncentrosymmetric few-layer and bulk γ-GeSe have semiconducting band structures with indirect band gaps, which depend almost linearly on the reciprocal of the number of layers. Spontaneous polarization occurs due to a small charge transfer between the layers, which increases with compressive strain, and ferroelectric switching can be achieved by an interlayer translation with a small energy barrier. Spin-splitting is found to be more significant at the highest valence band than at the lowest conduction band. Our results provide insights into the fundamental electronic properties of a layered ferroelectric semiconductor applicable to devices with ferroelectric/nonferroelectric junctions.

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Dynamic strain-induced giant electroresistance and erasing effect in ultrathin ferroelectric tunnel-junction memory

Cited by 19 publications

References 45 publications

Nondestructive Readout Complementary Resistive Switches Based on Ferroelectric Tunnel Junctions

Nondestructive Readout Complementary Resistive Switches Based on Ferroelectric Tunnel Junctions

Giant Electroresistance in Ferroionic Tunnel Junctions

Quasiparticle band structures, spontaneous polarization, and spin-splitting in noncentrosymmetric few-layer and bulk $γ$-GeSe

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