Dynamic screening and electron dynamics in non-homogeneous metal systems

Silkin, Viatcheslav M.; Balassis, Antonios; Leonardo, Aritz; Chulkov, Eugene V.; Echenique, Pedro M.

doi:10.1007/s00339-008-4557-4

Cited by 7 publications

(4 citation statements)

References 86 publications

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“…Moreover, the thickness-dependent L φ strongly reflects a substrate influence on the properties of the 2DEG. We speculate that the inelastic inter-band electron-electron scattering resulting from the overlap between the s 1 surface state, interface state of the superstructure, and the bulk state of the Ag substrate is the main driving force for the decayed/diminished standing wave observed on the structures closely atop the Ag(111) substrate485152. A similar scattering mechanism has led to the decay of standing waves on noble metal surfaces when the surface state band approaches the bulk band edge4852.…”

Section: Resultsmentioning

confidence: 86%

Interfacial Coupling and Electronic Structure of Two-Dimensional Silicon Grown on the Ag(111) Surface at High Temperature

Feng

Wagner

Zhang

2015

Sci Rep

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Freestanding silicene, a monolayer of Si arranged in a honeycomb structure, has been predicted to give rise to massless Dirac fermions, akin to graphene. However, Si structures grown on a supporting substrate can show properties that strongly deviate from the freestanding case. Here, combining scanning tunneling microscopy/spectroscopy and differential conductance mapping, we show that the electrical properties of the phase of few-layer Si grown on Ag(111) strongly depend on film thickness, where the electron phase coherence length decreases and the free-electron-like surface state gradually diminishes when approaching the interface. These features are presumably attributable to the inelastic inter-band electron-electron scattering originating from the overlap between the surface state, interface state and the bulk state of the substrate. We further demonstrate that the intrinsic electronic structure of the as grown phase is identical to that of the R30° reconstructed Ag on Si(111), both of which exhibit the parabolic energy-momentum dispersion relation with comparable electron effective masses. These findings highlight the essential role of interfacial coupling on the properties of two-dimensional Si structures grown on supporting substrates, which should be thoroughly scrutinized in pursuit of silicene.

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Section: Resultsmentioning

confidence: 86%

Interfacial Coupling and Electronic Structure of Two-Dimensional Silicon Grown on the Ag(111) Surface at High Temperature

Feng

Wagner

Zhang

2015

Sci Rep

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“…Thus the first principles calculations [4][5][6][7][8][9][10][11][12][13][14] have shown that the inelastic lifetime of excited electrons indeed is a result of balance between localization, screening and band structure details, even in metals whose electronic structure frequently considered as being a free-electron-like one. 15,16 In the previous theoretical work a non-free-electron like behavior of damping rates in Be, 15,17 the role of the screening of the d-electrons in inelastic lifetimes on Cu, 6,15 transient exciton 18,19 and full inclusion of exchange-correlation (XC) effects 20 as well as renormalization effects on quasiparticle (excited electron or hole) lifetimes in noble and transition paramagnetic [21][22][23] and ferromagnetic metals 24 and compounds [25][26][27] were studied by means of the GW approximation. 28 Using the T-matrix theory 29,30 the consequences of spin-flip processes on damping rates in magnetic materials were found to be significant for the spinminority states.…”

Section: Introductionmentioning

confidence: 99%

First-principles quasiparticle damping rates in bulk lead

2011

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First-principles calculations of the damping rates (inverse inelastic lifetimes), τ −1 , of low-energy quasiparticles in bulk Pb are presented. Damping rates are obtained both for excited electrons and holes with energies up to 8 eV on a set of k vectors throughout the Brillouin zone (BZ). Strong localization effects in the calculated τ −1 are found. Averaged over the BZ inelastic lifetimes versus quasiparticle energy are reported as well. Consequences of inclusion of the ab initio Pb band structure in the lifetime calculation are analyzed. In addition, the effect of the spin-orbit-induced splitting in the band structure on the calculated lifetimes in Pb is investigated.

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“…As the wave function of the quantum well state is mainly localized at the alkali adsorbate layer, it must dominate the dielectric properties of the whole system in the low-v-low-q jj domain. This effect was shown recently in the case of the Na/Cu(111) system in Refs [43][44][45], where the evolution of the surface loss function and screened dynamical Coulomb interaction in Na/Cu(111) upon the change in the Na coverage was studied.…”

Section: D Calculationsmentioning

confidence: 99%