Dynamic response of polydomain ferroelectric barium titanate epitaxial thin films and its field dependence

Liu, Zhifu; Meier, Andreas; Wessels, Bruce W.

doi:10.1063/1.2978216

Cited by 8 publications

(4 citation statements)

References 26 publications

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“…From the measurements shown in Fig. 4 we can furthermore exclude that ferroelectric domain switching 29 has a significant contribution on the EO response presented in Figs 2 and 3. These measurements were performed in the saturation regime of the hysteresis loop (|E off |43 Â 10 6 V m À 1 , see Methods section).…”

Section: Articlementioning

confidence: 77%

A strong electro-optically active lead-free ferroelectric integrated on silicon

et al. 2013

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The development of silicon photonics could greatly benefit from the linear electro-optical properties, absent in bulk silicon, of ferroelectric oxides, as a novel way to seamlessly connect the electrical and optical domain. Of all oxides, barium titanate exhibits one of the largest linear electro-optical coefficients, which has however not yet been explored for thin films on silicon. Here we report on the electro-optical properties of thin barium titanate films epitaxially grown on silicon substrates. We extract a large effective Pockels coefficient of r eff ¼ 148 pm V À 1 , which is five times larger than in the current standard material for electrooptical devices, lithium niobate. We also reveal the tensor nature of the electro-optical properties, as necessary for properly designing future devices, and furthermore unambiguously demonstrate the presence of ferroelectricity. The integration of electro-optical active films on silicon could pave the way towards power-efficient, ultra-compact integrated devices, such as modulators, tuning elements and bistable switches.

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Section: Articlementioning

confidence: 77%

A strong electro-optically active lead-free ferroelectric integrated on silicon

et al. 2013

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“…In ferroelectric devices, back witching can be a relevant contribution to the polarization dynamics . To address this point, we have written a P ↑ state (where P ↑ denotes polarization pointing towards Pt) by applying a suitable negative pulse (τ w = 1 s), equivalent to a measuring frequency of 0.5 Hz, and we have recorded the I–V loops ( V > 0) with a delay time (τ D ) between writing and reading voltage pulses as indicated in Figure (sketches).…”

Section: Resultsmentioning

confidence: 99%

Asymmetric Resistive Switching Dynamics in BaTiO₃ Tunnel Junctions

Qian

Fina

Sánchez

et al. 2018

Adv Elect Materials

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microstructural effects should play a major role on the time-dependent dynamics of the polarization switching. [23][24][25] Most commonly, asymmetric electrodes exist in ferroelectric capacitors either because of different metals are used or because the nature of the corresponding metal/ferroelectric and ferroelectric/metal interfaces is different. Thus, asymmetric polarization switching for the positive and the negative bias can occur, as experimentally observed. [22,[26][27][28][29][30] When referring to the resistive switching controlled by ferroelectric polarization, the same arguments given above suggest that the HRS-to-LRS and LRS-to-HRS processes could also be different, implying an asymmetric response when reversing the polarity of the writing electric fields. Understanding and controlling these effects are pivotal to exploit the potential multistate of the ferroelectric memristive device. Even more, a detailed knowledge on the resistive switching dynamics is crucial for ferroelectric tunnel junction's implementation in neuromorphic circuits, where time-dependent action potentials trigger the synapse responses. [31] In the particular case of ferroelectric tunnel barriers, Chanthbouala et al. [17] pioneeringly reported on the impact of the polarization switching dynamics on the measured change of resistance (so-called electroresistance, ER, or tunnel electroresistance, TER). These authors observed that under a given voltage bias larger than the coercive field (at a given measuring frequency) the switching from LRS to HRS was gradual, expanding along a range of voltages. The smooth transition from LRS to HRS was successfully modeled by assuming the contributions of domain nucleation and expansion mechanisms on the domain dynamics. In contrast, the reverse process (HRS to LRS) was observed to be more abrupt. This observation, reminiscent of the asymmetric polarization reversal in ferroelectric capacitors, [22,26,[28][29][30] may imply a different responsivity of LRS and HRS to external stimuli, thus impacting the memristive response depending on the sign of the biasing electric field.Here we focus on the comparison of the resistive transition from LRS to HRS and HRS to LRS in BaTiO 3 (BTO) ferroelectric tunnel junctions, triggered by electric fields of different polarity. We show that the dynamics of polarization and the concomitant resistive switching of the BTO junctions are radically different for both polarizations. The resistive transition from LRS to HRS is smooth, suggesting it is dominated by random nucleation and growth of polar domains. In contrast, the HRSto-LRS transition displays avalanche-like features which depend on the amplitude and frequency of the applied electric field. WeThe resistive switching associated with polarization reversal is studied in detail in ferroelectric BaTiO 3 tunnel junctions, with focus on the dynamics of the ferroelectric domain switching. It is observed that the transition between the high-resistance state (HRS) and the low-resistance state (LRS) is largely asymmetri...

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“…The dynamics of dense walls was observed in BaTiO 3 where a stretched exponential behavior with β approaching 0.5 for small driving electric fields was found. 48 An interesting comparison is also with Barkhausen jumps in CrO 2 , which is a useful material for ferromagnetic applications, 49 where the dynamics is dominated by avalanches rather than ballistic wall movements. Unfortunately, the noise exponents were not determined so that we cannot compare these data with ours.…”

Section: Discussionmentioning

confidence: 99%

Dynamically strained ferroelastics: Statistical behavior in elastic and plastic regimes

et al. 2013

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The dynamic evolution in ferroelastic crystals under external shear is explored by computer simulation of a twodimensional model. The characteristic geometrical patterns obtained during shear deformation include dynamic tweed in the elastic regime as well as interpenetrating needle domains in the plastic regime. As a result, the statistics of jerk energy differ in the elastic and plastic regimes. In the elastic regime the distributions of jerk energy are sensitive to temperature and initial configurations. However, in the plastic regime the jerk distributions are rather robust and do not depend much on the details of the configurations, although the geometrical pattern formed after yield is strongly influenced by the elastic constants of the materials and the configurations we used. Specifically, for all geometrical configurations we studied, the energy distribution of jerks shows a power-law noise pattern P (E) ∼ E −(γ −1) (γ − 1 = 1.3 − 2) at low temperatures and a Vogel-Fulcher distribution P (E) ∼ exp-(E/E 0) at high temperatures. More complex behavior occurs at the crossover between these two regimes where our simulated jerk distributions are very well described by a generalized Poisson distributions P (E) ∼ E −(γ −1) exp-(E/E 0) n with n = 0.4-0.5 and γ − 1 ≈ 0 (Kohlrausch law). The geometrical mechanisms for the evolution of the ferroelastic microstructure under strain deformation remain similar in all thermal regimes, whereas their thermodynamic behavior differs dramatically: on heating, from power-law statistics via the Kohlrausch law to a Vogel-Fulcher law. There is hence no simple way to predict the local evolution of the twin microstructure from just the observed statistical behavior of a ferroelastic crystal. It is shown that the Poisson distribution is a convenient way to describe the crossover behavior contained in all the experimental data without recourse to specific scaling functions or temperature-dependent cutoff lengths.

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Dynamic response of polydomain ferroelectric barium titanate epitaxial thin films and its field dependence

Cited by 8 publications

References 26 publications

A strong electro-optically active lead-free ferroelectric integrated on silicon

A strong electro-optically active lead-free ferroelectric integrated on silicon

Asymmetric Resistive Switching Dynamics in BaTiO₃ Tunnel Junctions

Dynamically strained ferroelastics: Statistical behavior in elastic and plastic regimes

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Dynamic response of polydomain ferroelectric barium titanate epitaxial thin films and its field dependence

Cited by 8 publications

References 26 publications

A strong electro-optically active lead-free ferroelectric integrated on silicon

A strong electro-optically active lead-free ferroelectric integrated on silicon

Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions

Dynamically strained ferroelastics: Statistical behavior in elastic and plastic regimes

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Asymmetric Resistive Switching Dynamics in BaTiO₃ Tunnel Junctions