1979
DOI: 10.1029/jb084ib10p05557
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Dynamic recrystallization during creep of single‐crystalline halite: An experimental study

Abstract: Single crystals of pure and impure halite have been dynamically recrystallized during compression creep at temperatures between 250 ø and 790øC and stresses between 1.5 and 120 bars. Recrystallization was found to occur by two different mechanisms: at lower temperatures and stresses the new grains result from the rotation of subgrains without grain boundary migration (rotation recrystallization), and at higher temperatures and stresses the final texture results from the migration of the high-angle grain bounda… Show more

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Cited by 354 publications
(184 citation statements)
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“…In anisotropic minerals, misorientations may be considerably larger so that some subgrains have sufficient misorientations to become active nuclei. This "subgrain rotation recrystallization" [Guillop• and Poirier, 1979;Poirier and Guillop& 1979] is equivalent to nucleation in our model, though there can be other mechanisms to create nuclei.…”
Section: Recrystallizationmentioning
confidence: 99%
“…In anisotropic minerals, misorientations may be considerably larger so that some subgrains have sufficient misorientations to become active nuclei. This "subgrain rotation recrystallization" [Guillop• and Poirier, 1979;Poirier and Guillop& 1979] is equivalent to nucleation in our model, though there can be other mechanisms to create nuclei.…”
Section: Recrystallizationmentioning
confidence: 99%
“…Abundant subgrain walls, recrystallized grains of similar size as subgrains and predominantly low misorientation angles (Figs. 6e-g) suggest the activation of subgrain rotation recrystallization (e.g., Guillopé and Poirier, 1979), whereas the presence of lobate/sutured grain boundaries (Fig. 6e, f) indicates localized grain boundary migration recrystallization (Urai et al, 1986).…”
Section: Deformation Mechanisms and Fabric Evolution At The Tip Of Wementioning
confidence: 99%
“…The crystal is then replaced with a new ''strain-free'' crystal, with dislocation density r 0 = 10 10 m À2 [Montagnat and Duval, 2000]. The size of the new crystal scales with the effective stress s e 2 = s kl s kl /2 as D 0 $ s e À1.33 [Guillope and Poirier, 1979;Ross et al, 1980;Shimizu, 1998Shimizu, , 1999. A totally random orientation for the new grain is not to be expected; some subset of possible zenith angles seems more likely.…”
Section: Dynamic Recrystallizationmentioning
confidence: 99%