Abstract:This paper proposes a low-phase noise CMOS VCO for more than 10 GHz oscillation, which utilizes a PMOS-bias and PMOS-crosscouple topology. PMOS transistors have lower 1/f noise while they have larger gate capacitance. In this work, a transmission-line resonator is employed to enhance the high-frequency operation. The VCO is fabricated by a 180nm Si CMOS process. A phase noise is -112.6dBc/Hz, and frequency tuning range is 11.8 GHz-12. 4GHz. Power consumption is 8.6mW. Figure of Merit is -184.9 dBc/Hz.
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