2010
DOI: 10.5369/jsst.2010.19.4.328
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Dynamic range extension of the n-well/gate-tied PMOSFET-type photodetector with a built-in transfer gate

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Cited by 4 publications
(4 citation statements)
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“…A charge-coupled device (CCD) and a complementary metaloxide-semiconductor (CMOS) image sensor (CIS) are commonly used for image capture [1][2][3][4][5][6][7]. Recently, CISs have mainly been used for portable devices and security cameras because a CIS is cheaper and more power efficient than a CCD-type image sensor [8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…A charge-coupled device (CCD) and a complementary metaloxide-semiconductor (CMOS) image sensor (CIS) are commonly used for image capture [1][2][3][4][5][6][7]. Recently, CISs have mainly been used for portable devices and security cameras because a CIS is cheaper and more power efficient than a CCD-type image sensor [8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…Fig. 1 shows a cross sectional view of the gate/body-tied PMOSFET-type photodetector [16][17][18], and Fig. 2 shows its symbol.…”
Section: Introductionmentioning
confidence: 99%
“…Since the 1990s, it has become possible to integrate image signal processing circuits into a single chip due to progress in the field of complementary metal oxide semiconductor(CMOS) technology [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. The smart vision chip inspired by the human retina also exhibits a lower power dissipation and a higher operating speed [1].…”
Section: Introductionmentioning
confidence: 99%