Dynamic observation of ferroelectric domain switching using scanning nonlinear dielectric microscopy

Hiranaga, Yoshiomi; Mimura, Takanori; Shiraishi, Takashi; Funakubo, Hiroshi; Cho, Yasuo

doi:10.7567/jjap.56.10pf16

Cited by 4 publications

(2 citation statements)

References 30 publications

(35 reference statements)

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“…Nanoscale-domain observation using scanning probe microscopy (SPM) is a commonly used approach for understanding the properties of ferroelectrics. Piezoresponse force microscopy (PFM) [1][2][3][4] and scanning nonlinear dielectric microscopy (SNDM) [5][6][7][8] are SPM-based methods used for this purpose and have contributed to the advancement of this field. However, in applications that utilize polarization switching, such as ferroelectric random access memory, 9,10) not only static domain structure analysis but also dynamic behavior analysis is important because both the static domain structure and dynamic behavior are related to the reliability and working speed of the devices.…”

Section: Introductionmentioning

confidence: 99%

High-precision local C–V mapping for ferroelectrics using principal component analysis

Hiranaga

Mimura

Shimizu

et al. 2021

Jpn. J. Appl. Phys.

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Local C-V mapping based on scanning nonlinear dielectric microscopy (SNDM) is a useful tool for characterizing ferroelectric domain dynamics at the nanoscale. In this study, we realized high-precision C-V mapping through an improved measurement system that introduces a digitizer and post-signal processing. Coupled with the high capacitance detection sensitivity of SNDM, nontrivial patterns corresponding to the polarization response were observed even in harmonic images with an order as high as thirty. Using these high-order harmonic components for the C-V curve resynthesis led to improved measurement accuracy. In addition, further improvement was achieved by introducing noise reduction based on principal component analysis. From the C-V curves resynthesized in this manner, parameters that represent the curve features could be extracted and subsequently displayed in two-dimensional maps. Detailed analyses of the datasets obtained with a ferroelectric HfO 2 film revealed interesting distributions concerning local polarization switching dynamics.

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Section: Introductionmentioning

confidence: 99%

High-precision local C–V mapping for ferroelectrics using principal component analysis

Hiranaga

Mimura

Shimizu

et al. 2021

Jpn. J. Appl. Phys.

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“…However, in the framework of the double-layer concept, LiTaO 3 becomes a promising candidate for the hard material of the bottom layer. HfO 2 -based ferroelectrics, which have attracted increased attention lately, also do not have sufficient ε 333 , while this family of ferroelectrics has favorable characteristics in that the ferroelectricity does not disappear in the very low (< 10 nm) film-thickness range [21], [22]. The double-layer concept will also lower the threshold for the adoption of such novel-type ferroelectrics.…”

Section: Materials Design Strategy For Ferroelectric Recording Mediamentioning

confidence: 99%

Material Design Strategy for Enhancement of Readback Signal Intensity in Ferroelectric Probe Data Storage

Hiranaga

Cho

2021

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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Ferroelectricprobe data storage (FPDS) based on scanning nonlinear dielectric microscopy is expected as a next-generation data storage method with its large potential for improvement of the recording density. However, this novel method has a problem of low reading speed. To overcome this problem, a novel ferroelectric recording medium with large nonlinear permittivity is required because this data storage method uses the nonlinear dielectric response induced by small-amplitude ac bias to detect the bit data recorded in the form of polarization direction. Therefore, this article discusses nonlinear permittivity enhancement from the viewpoint of data storage application in the framework of the phenomenological theory. We reveal that the Curie-point control is one of the key techniques in material design for FPDS because nonlinear permittivity increases precipitously as the Curie temperature is approached, as with the linear permittivity and piezoelectric constants. A similar conclusion is also obtained through actual measurements of nonlinear permittivity in LiTaO 3 single crystals. On the other hand, we also reveal that there is a tradeoff relationship between nonlinear permittivity and polarization stability. To avoid this undesirable situation in data storage applications, pinning-site control will also be important. We also propose to employ a double-layer structure in the ferroelectric recording media for further improvement.

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Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films

Yasuoka

Shiraishi

Tateyama

et al. 2020

Journal of Applied Physics

160

151

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The ferroelectricity of (Al1−xScx)N (x = 0–0.34) thin films with various thicknesses was investigated. (Al1−xScx)N films were prepared at 400 °C on (111)Pt/TiOx/SiO2/(001)Si substrates by the radio frequency dual-source reactive magnetron sputtering method using Al and Sc targets under pure N2 gas or a mixture of N2 and Ar gases. The film deposited under N2 gas showed larger remanent polarization than those under N2 + Ar mixture. Ferroelectricity was observed for films with x = 0.10–0.34 for about 140-nm-thick films deposited under N2 gas. The x = 0.22 films showed ferroelectricity down to 48 nm in thickness from the polarization–electric field curves and the positive-up-negative-down measurement. The ferroelectricity of the 9 nm-thick film also was ascertained from scanning nonlinear dielectric microscopy measurement. These results reveal that ferroelectric polarization can switch for films with much broader compositions and thicknesses than those in the previous study.

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Dynamic observation of ferroelectric domain switching using scanning nonlinear dielectric microscopy

Cited by 4 publications

References 30 publications

High-precision local C–V mapping for ferroelectrics using principal component analysis

High-precision local C–V mapping for ferroelectrics using principal component analysis

Material Design Strategy for Enhancement of Readback Signal Intensity in Ferroelectric Probe Data Storage

Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films

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