Dynamic Nanophotonics in Epsilon‐Near‐Zero Conductive Oxide Films and Metasurfaces: A Quantitative, Nonlinear, Computational Model

Baxter, Joshua; Pérez-Casanova, Adriana; Cortes-Herrera, Luis; Lesina, Antonino Calà; León, Israel De; Ramunno, Lora

doi:10.1002/adpr.202300141

Cited by 2 publications

(3 citation statements)

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“…Here, we propose substituting metal with a transparent conductive oxide (TCO) material, − using aluminum zinc oxide (AZO) , as an illustrative example. We focus on the ZnO-based compound as it is biocompatible, biodegradable, biosecure, cheap, and CMOS-compatible (as other TCO materials) and is already considered for sensing and optoelectronic and storage applications. , However, the family of transparent conductive oxides (TCOs) is very broad ranging from indium tin oxide (ITO), indium zinc oxide (IZO), cadmium oxide (CdO), gallium zinc oxide (GZO), and aluminum zinc oxide (AZO) to mention only a few of the most popular compounds .…”

Section: Introductionmentioning

confidence: 99%

“…Thus, they can operate over a wide range of wavelengths from ultraviolet (UV) to MIR. TCO materials have recently garnered attention in the context of nonlinear devices − and optical modulators, − with a specific focus on their operation within the “epsilon near zero” (ENZ) regime, where the real part of the permittivity approaches zero. − Notably, some remarkable results have been reported. Yet, there remains a stubborn fact: TCO materials respond to both electrical and all-optical modulation signals based on the plasma (Drude) dispersion of free carriers. , Consequently, TCO devices inherently exhibit substantial insertion losses, thereby limiting their practical applications despite a considerable number of enthusiastic publications.…”

Section: Introductionmentioning

confidence: 99%

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Schottky Photodetectors with Transparent Conductive Oxides for Photonic Integrated Circuits

Gosciniak,

Khurgin

2024

ACS Photonics

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Silicon photonics has many attractive features but faces a major issue: inefficient and slow photodetection in the telecom range. New metal−semiconductor Schottky photodetectors based on intraband absorption address this problem, but their efficiency remains low. We suggest that by creating a junction between silicon and a transparent oxide with appropriate doping, which results in a real permittivity close to zero (known as the epsilon near zero or ENZ regime), detection efficiency could increase by more than 10-fold. Using aluminum zinc oxide (AZO) as an example, we design an optimized AZO/Si slot photonic waveguide detector that could potentially reach an efficiency of several tens of percent, in contrast to a few percent for a metal/Si Schottky detector. This increase is primarily due to the lower density of states in AZO compared to that of metal, along with superior coupling efficiency and strong absorption within a 10 nm slot.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Schottky Photodetectors with Transparent Conductive Oxides for Photonic Integrated Circuits

Gosciniak,

Khurgin

2024

ACS Photonics

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“…Transparent conductive oxides (TCOs), which belong to the epsilon‐near‐zero (ENZ) materials, seem to be an excellent material for such a task, as they can absorb energy under a wide range of wavelengths. [ 15–20 ] They possess large permittivity tunability under an applied voltage or light illumination, [ 21–26 ] allowing the material properties to be tuned to specific requirements. They also feature low optical loss, fast switching time, and low switching voltage.…”

Section: Introductionmentioning

confidence: 99%

Integrated Bolometric Photodetectors Based on Transparent Conductive Oxides from Near‐ to Mid‐Infrared Wavelengths

Gosciniak

2023

Advanced Photonics Research

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On‐chip photodetectors are essential components in optical communications as they convert light into an electrical signal. Photobolometers are a type of photodetector that functions through a resistance change caused by electronic temperature fluctuations upon light absorption. They are widely used in the broad wavelength range from ultraviolet to mid‐infrared (MIR). In this work, a novel waveguide‐integrated bolometer that operates in a wide wavelength range from near‐infrared to MIR is introduced on the standard material platform with the transparent conductive oxides (TCOs) as the active material. This material platform enables the construction of both modulators and photodetectors using the same material, which is fully complementary metal–oxide–semiconductor compatible and easily integrated with passive on‐chip components. The photobolometers proposed here consist of a thin TCO layer placed inside the rib photonic waveguide to enhance light absorption and then heat the electrons in the TCO. This rise in electron temperature leads to decreasing electron mobility and consequential electrical resistance change. In consequence, a responsivity exceeding 10 A W−1can be attained with a mere few microwatts of optical input power. Calculations suggest that further improvements can be expected with lower doping of the TCO, thus opening new doors in on‐chip photodetectors.

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Dynamic Nanophotonics in Epsilon‐Near‐Zero Conductive Oxide Films and Metasurfaces: A Quantitative, Nonlinear, Computational Model

Cited by 2 publications

References 0 publications

Schottky Photodetectors with Transparent Conductive Oxides for Photonic Integrated Circuits

Schottky Photodetectors with Transparent Conductive Oxides for Photonic Integrated Circuits

Integrated Bolometric Photodetectors Based on Transparent Conductive Oxides from Near‐ to Mid‐Infrared Wavelengths

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