Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes

Chen, Yaojiang; Zhao, Xuyi; Huang, Jian; Cao, Chunfang; Gong, Qian; Chen, Baile

doi:10.1364/oe.26.035034

Cited by 27 publications

(13 citation statements)

References 25 publications

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“…This RC limited bandwidth is slightly larger than the measured bandwidth value; it is expected that the device performance may be limited by both RC and transit time. As one of the future works, the semi-insulator Si substrate or thick benzocyclobutene (BCB) layer or SU8 layer can be used for material growth and device fabrication to minimize the parasitic capacitance in the device, which could potentially improve the RC limited performance. , …”

Section: Measurement and Analysismentioning

confidence: 99%

Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si

et al. 2020

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Avalanche photodetectors (APDs) on Si operating at optical communication wavelength band are crucial for Si-based transceiver application. In this paper, we report the first O-band InAs quantum dot (QD) waveguide avalanche photodetectors monolithically grown on Si with a low dark current of 0.1 nA at unit gain and a responsivity of 0.234 A/W at 1.310 μm at unit gain (-5V). In the linear gain mode, the APDs have a maximum gain of 198 and show a clear eye diagram up to 8 Gbit/s. These QD-based APDs enjoy the benefit of sharing the same epitaxial layers and processing flow as QD lasers, which could potentially facilitate the integration with laser sources on Si platform.

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Section: Measurement and Analysismentioning

confidence: 99%

Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si

et al. 2020

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“…The Ti layers provide good adhesion to GaSb and InAs, while the Pt layers prevent Au penetration into the semiconductor 25 . The devices were finally connected to a coplanar waveguide (CPW) pad of 50 Ω characteristic impedance through an air-bridge, which was electroplated on 2 μm thick SU-8 to achieve insulation of each device 20,26 , as shown in Figure 1c.…”

Section: Radio Frequency Characterizationmentioning

confidence: 99%

High-speed mid-wave infrared interband cascade photodetector at room temperature

Xie¹,

Huang²,

Chai³

et al. 2020

Opt. Express

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High speed mid-wave infrared (MWIR) photodetectors have important applications in the emerging areas such highprecision frequency comb spectroscopy and light detection and ranging (LIDAR). In this work, we report a high-speed room-temperature mid-wave infrared interband cascade photodetector (ICIP) based on a type-II InAs/GaSb superlattice. The devices show an optical cut-off wavelength around 5µm and a 3-dB bandwidth up to 7.04 GHz. The relatively low dark current density around 9.39 × 10 −2 A/cm 2 under −0.1 V is also demonstrated at 300K. These results validate the advantages of ICIPs to achieve both high-frequency operation and low noise at room temperature. Limitations on the high-speed performance of the detector are also discussed based on the S-parameter analysis and other RF performance measurement.Semiconductor photodetectors sensitive to mid-wave infrared (MWIR) have attracted extensive attentions in many applications such as chemical sensing, gas monitoring and high-performance infrared imaging. In some special applications, such as free-space optical communication and frequency comb spectroscopy, MWIR photodetectors capable of highfrequency operation are required as an essential component 1-6 . Currently, quantum well infrared photodetectors (QWIPs) and quantum cascade photodetectors (QCDs) for high speed MWIR applications have been demonstrated [7][8][9] . Nevertheless performance of QCDs is mainly limited by absorption efficiency and noise due to a short carrier lifetime 10-15 , and QWIPs have shortcomings in large dark currents and no response to normal incident light 7,16 .Compared with conventional photodetectors, interband cascade infrared photodetectors (ICIPs) have more flexibility to alleviate the limitation on absorber thickness due to a finite diffusion length so that all photo-generated carriers can be efficiently collected, while absorption of incident light can be ensured with multiple absorbers located in each stage connected in series 16 . On the other hand, the individual absorber thickness in every stage can be shortened to reduce the carrier transit time across a single stage. Another advantage of ICIPs is that noise is suppressed by the multiple discrete short absorbers, instead of a single long absorber 17,18 . As one of the most widely studied material system for MWIR, ICIPs based on InAs/GaSb type-II superlattice (T2SL) could offer several advantages such as wavelength tunability between 1 to 25 μm, excellent carrier transport properties and signal to noise ratio (SNR) 16 . Lotfi et al. reported a three-stage ICIP based on InAs/GaSb/AlSb/InSb T2SLs with a cutoff wavelength around 4.2µm at 300K, and the corresponding 3-dB bandwidth was ~1.3 GHz under zero bias 19 . Recently, a two-stage ICIP employing the InAs/Ga(As)Sb T2SLs as the absorption layer with cutoff wavelength of 5.6 μm and the 3-dB bandwidth of 2.4 GHz under −5 V bias at 300 K was demonstrated by our group 20 . In this paper, we report a five-stage ICIP based on InAs/GaSb type-II superlattice with a thin absorber of ...

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“…Photodetectors (PDs) are an essential photonic device to convert optical signals to electrical signals [ 8 ]. For 2 µm wavelength applications, although market-dominated III–V-based short–wave infrared (SWIR) PDs show a promising performance in the 2 µm wavelength [ 9 , 10 ], their incompatibility with Si–based complementary metal-oxide-semiconductor (CMOS) processing technology has made them expensive and less possible for large-scale integration. On the other hand, over the last few decades, group–IV–based SWIR PDs have attracted attention due to their compatibility with standard Si-based CMOS processing technology and their monolithically integrability on the same Si chip [ 11 , 12 ] to realize electronic–photonic integrated circuits (EPICs).…”

Section: Introductionmentioning

confidence: 99%

Design and Optimization of GeSn Waveguide Photodetectors for 2-µm Band Silicon Photonics

Ghosh

Bansal

Sun

et al. 2022

Sensors

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Silicon photonics is emerging as a competitive platform for electronic–photonic integrated circuits (EPICs) in the 2 µm wavelength band where GeSn photodetectors (PDs) have proven to be efficient PDs. In this paper, we present a comprehensive theoretical study of GeSn vertical p–i–n homojunction waveguide photodetectors (WGPDs) that have a strain-free and defect-free GeSn active layer for 2 µm Si-based EPICs. The use of a narrow-gap GeSn alloy as the active layer can fully cover entire the 2 µm wavelength band. The waveguide structure allows for decoupling the photon-absorbing path and the carrier collection path, thereby allowing for the simultaneous achievement of high-responsivity and high-bandwidth (BW) operation at the 2 µm wavelength band. We present the theoretical models to calculate the carrier saturation velocities, optical absorption coefficient, responsivity, 3-dB bandwidth, zero-bias resistance, and detectivity, and optimize this device structure to achieve highest performance at the 2 µm wavelength band. The results indicate that the performance of the GeSn WGPD has a strong dependence on the Sn composition and geometric parameters. The optimally designed GeSn WGPD with a 10% Sn concentration can give responsivity of 1.55 A/W, detectivity of 6.12 × 1010 cmHz½W−1 at 2 µm wavelength, and ~97 GHz BW. Therefore, this optimally designed GeSn WGPD is a potential candidate for silicon photonic EPICs offering high-speed optical communications.

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Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes

Cited by 27 publications

References 25 publications

Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si

Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si

High-speed mid-wave infrared interband cascade photodetector at room temperature

Design and Optimization of GeSn Waveguide Photodetectors for 2-µm Band Silicon Photonics

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