Dynamic Matching System for Radio-Frequency Plasma Generation

Bastami, Anas Al; Jurkov, Alexander S.; Gould, P.; Hsing, Mitchell; Schmidt, Martin; Park, Yong Ha

doi:10.1109/tpel.2017.2734678

Cited by 42 publications

(10 citation statements)

References 13 publications

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“…In this context, the primary purpose of a TMN block is to present an impedance that is suitable for the inverter and power combining system (e.g., Z L in Fig. 4(a)); several such suitable TMNs have been reported in the literature [6], [7], [33]- [36]. The next two subsections outline two dc-torf architectures demonstrating the usefulness of multiple power control schemes in achieving fast and efficient wide-powerand wide-load-range operation at HF, and present supporting simulation results.…”

Section: Variable-load High Efficiency Dc-to-rf System Architecturesmentioning

confidence: 99%

Comparison of Radio-Frequency Power Architectures for Plasma Generation

Bastami

Zhang

Jurkov

et al. 2020

2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL)

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Applications such as plasma generation require the generation and delivery of radio-frequency (rf) power into widely-varying loads while simultaneously demanding high accuracy and speed in controlling the output power across a wide range of power levels. Attaining high efficiency and performance across all operating conditions while meeting these system requirements is challenging, especially at high frequencies (10s of MHz) and power levels (1000s of Watts and above). This paper evaluates different architectures that directly address these challenges and enable efficient high-frequency operation over a wide range of output power levels and load impedances with the capability of fast output power control (e.g., within a few microseconds). We review techniques for achieving fast output power control and evaluate their suitability in efficient rf systems demanding accurate and fast control of output power. Two dc-to-rf system architectures utilizing the discussed power control techniques are presented to illustrate both the achievable performance benefits as well as their robustness to load impedance variation, and are compared using time-domain simulations. The results indicate the ability of the proposed architectures to maintain high efficiency (> 90%) across a very wide range of output power levels (e.g., over a factor of up to 85x) while being robust to load impedance variations.

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Section: Variable-load High Efficiency Dc-to-rf System Architecturesmentioning

confidence: 99%

Comparison of Radio-Frequency Power Architectures for Plasma Generation

Bastami

Zhang

Jurkov

et al. 2020

2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL)

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“…To demonstrate the effectiveness of phase-switched impedance modulation for implementing tunable impedance matching, we have developed a TMN design based on an impedance step-up L-section matching network with electronically-variable effective impedances. Such a network configuration is suitable for plasma drive applications where the driving-point impedance of an RF plasma-excitation coil must often be stepped-up and matched to the output impedance of a power amplifier PA (e.g., see [17] for a plasma matching system at similar power levels). A power amplifier is thus connected at the IN terminal, and the plasma load is connected at the OUT terminal, with the TMN serving to match the variable plasma load impedance to the 50 Ω load desired for the PA. As Fig.…”

Section: Tunable Impedance Matching Network Designmentioning

confidence: 99%

“…Dynamic component tuning and impedance matching have application to a diverse range of radio-frequency (RF) power applications, including software-defined radios [1], frequencyagile and adaptive RF transmitters and receivers [2], [3], new types of highly-efficient RF power amplifiers [4], plasma drivers [17], generators [5], [6], wireless power transfer [7,19,20], power converters [14] and many other industrial processes. Electronically-controlled tunable impedance matching networks (TMNs) in particular can be valuable in many RF applications.…”

Section: Introductionmentioning

confidence: 99%

Tunable Matching Networks Based on Phase-Switched Impedance Modulation1

Jurkov

Radomski

Perreault

2020

IEEE Trans. Power Electron.

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The ability to provide accurate, rapid and dynamically-controlled impedance matching offers significant advantages to a wide range of present and emerging radiofrequency (RF) power applications. This work develops a new type of tunable matching network (TMN) that enables a combination of much faster and more accurate impedance matching than is available with conventional techniques, and is suitable for use at high power levels. This implementation is based on a narrow-band technique, termed here phase-switched impedance modulation (PSIM), which entails the switching of passive elements at the RF operating frequency, effectively modulating their impedances. The proposed approach provides absorption of device parasitics and zero-voltage switching (ZVS) of the active devices, and we introduce control techniques that enable ZVS operation to be maintained across operating conditions. A prototype PSIM-based TMN is developed that provides a 50 Ohm match over a load impedance range suitable for inductively-coupled plasma processes. The prototype TMN operates at frequencies centered around 13.56 MHz at input RF power levels of up to 200 W.

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“…During the matching process, a load impedance range (Z = R + jX), composed of both resistive part and reactive parts, is required to prevent power losses. In theory, the voltage-current relationships for a lossless two-port network can be written as follows [39]:…”

Section: Hydrogen Dilution Ratio Impact On the Matching Networkmentioning

confidence: 99%

Correlation of Impedance Matching and Optical Emission Spectroscopy during Plasma-Enhanced Chemical Vapor Deposition of Nanocrystalline Silicon Thin Films

et al. 2019

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In this paper, the correlation of impedance matching and optical emission spectroscopy during plasma-enhanced chemical vapor deposition (PECVD) was systematically investigated in SiH4 plasma diluted by various hydrogen dilution ratios. At the onset of nanocrystallinity in SiH4− depleted plasma condition, the SiH+ radical reached a threshold value as the dominant radical, such that a-Si to nc-Si transition was obtained. Furthermore, the experimental data of impedance analysis showed that matching behavior can be greatly influenced by variable plasma parameters due to the change of various hydrogen dilution ratios, which is consistent with the recorded optical emission spectra (OES) of Hα* radicals. Quadruple mass spectrometry (QMS) and transmission electron microscopy (TEM) were employed as associated diagnostic and characterization tools to confirm the phase transformation and existence of silicon nanocrystals.

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Dynamic Matching System for Radio-Frequency Plasma Generation

Cited by 42 publications

References 13 publications

Comparison of Radio-Frequency Power Architectures for Plasma Generation

Comparison of Radio-Frequency Power Architectures for Plasma Generation

Tunable Matching Networks Based on Phase-Switched Impedance Modulation1

Correlation of Impedance Matching and Optical Emission Spectroscopy during Plasma-Enhanced Chemical Vapor Deposition of Nanocrystalline Silicon Thin Films

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