Dynamic junction temperature estimation via built-in negative thermal coefficient (NTC) thermistor in high power IGBT modules

Zhou, Yurong; Shi, Wei; Tang, Junsong; Wang, Xiang; Li, Wuhua; He, Xiangning; Chao-shan, Zhang; Li, Zhuozhi

doi:10.1109/apec.2017.7930782

Cited by 28 publications

(9 citation statements)

References 6 publications

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“…TTCs can be suitable for on-line temperature measurements. Various types of TTCs have been realized, such as integrated diodes and resistance temperature detectors (RTDs) [67][68][69][70][71][72][73][74][75]. As the forward voltage of the diodes strongly depends on the temperature variation, the measure of the voltage drop can be used for temperature estimation.…”

Section: Thermal Test Chipsmentioning

confidence: 99%

“…Instead, in [69] a thin-film RTD placed on the top of the IGBT chip has been realized to measure the average temperature of the die. A similar solution where an NTC thermistor has been embedded in the IGBT power module has been also investigated [70]. Innovative use of a kelvin-emitter resistor, placed directly on the IGBT die surface, as a junction temperature sensor has been also adopted [71].…”

Section: Thermal Test Chipsmentioning

confidence: 99%

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Two Decades of Condition Monitoring Methods for Power Devices

2021

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Condition monitoring (CM) of power semiconductor devices enhances converter reliability and customer service. Many studies have investigated the semiconductor devices failure modes, the sensor technologies, and the signal processing techniques to optimize the CM. Furthermore, the improvement of power devices’ CM thanks to the use of the Internet of Things and artificial intelligence technologies is rising in smart grids, transportation electrification, and so on. These technologies will be widespread in the future, where more and more smart techniques and smart sensors will enable a better estimation of the state of the health (SOH) of the devices. Considering the increasing use of power converters, CM is essential as the analysis of the data obtained from multiple sensors enables the prediction of the SOH, which, in turn, enables to properly schedule the maintenance, i.e., accounting for the trade-off between the maintenance cost and the cost and issues due to the device failure. From this perspective, this review paper summarizes past developments and recent advances of the various methods with the aim of describing the current state-of-the-art in CM research.

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Section: Thermal Test Chipsmentioning

confidence: 99%

Section: Thermal Test Chipsmentioning

confidence: 99%

Two Decades of Condition Monitoring Methods for Power Devices

2021

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“…Reference [1] is the Shockley theory, [2] and [3] are the explanations and application instructions of the basic textbooks of bipolar junction transistors; As for [4] and [5] are related to MATLAB software application reference and the examples in the textbooks [6,7] are based on the theoretical integration and application of actual transistor amplifier circuits are the blueprints for calculation and design. In [8], the author had introduced that the junction temperature estimation is obtained by the negative thermistor under dynamic conditions. As for [9,10], the junction temperature can be estimated by obtaining the dynamic thermal reactance from the frequency response of the system.…”

Section: Literature Reviewmentioning

confidence: 99%

Discussion and Improvement on the Calculation of the Relationship between the Base Emitter of the Bipolar Junction Transistor and the Temperature by Using MATLAB Software

Lin

2021

AJRCoS

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The purpose of this article is to explore and improve the effect of Bipolar Junction Transistor amplifier base-emitter on temperature changes. The prelude starts with Shockley's theory and its formula calculation. Research motivation, literature data and book principles cooperate with MATLAB application software skills to develop programs; it is used to calculate the relationship between various component parameters and temperature changes. The artificial calculation steps are too cumbersome and prone to clerical errors. Therefore, the program approach has been developed with report-style calculation results with both text and pictures. The feature of computer program calculation is the ability to compare and analyze the results produced at different temperatures, rapidly and repeatedly. The lack of known Bipolar Junction Transistors is replaced by Field Effect Transistors that are not affected by temperature. If the Bipolar Junction Transistor is used as the basis for the design, temperature changes must be considered to ensure the design quality. The purpose of this article is to introduce that the process of calculation has made the shift from an artificial-based way to a computer-based one.

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“…In [15], for the MOSFET power semiconductor devices, it is shown that the temperature can be estimated using p-n-junction forward voltage and gate threshold voltage, with high temperature resolution. The junction temperature of the high power IGBT modules can be obtained, according to [16] via built-in negative thermal coefficient thermistor, along with the power loss and a thermal model for the transient impedance between the chip and the thermistor.…”

Section: Introductionmentioning

confidence: 99%

Thermal Analysis of Power Semiconductor Device in Steady-State Conditions

Pleşca

2019

Energies

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Electronic devices can be damaged in an undesirable manner if the junction temperature achieves high values in order to cause thermal runaway and melting. This paper describes the mathematical model to calculate the power losses in power semiconductor devices used in bidirectional rectifier which supplies a resistive-inductive load. The obtained thermal model can be used to analyse the thermal behaviour of power semiconductors in steady-state conditions, at different values of the firing angle, direct current, air speed in the case of forced cooling, and different types of load. Also, the junction and case temperature of a power thyristor have been computed. In order to validate the proposed mathematical model, some experimental tests have been performed. The theoretical values are in good concordance with the experimental data and simulated results.

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Dynamic junction temperature estimation via built-in negative thermal coefficient (NTC) thermistor in high power IGBT modules

Cited by 28 publications

References 6 publications

Two Decades of Condition Monitoring Methods for Power Devices

Two Decades of Condition Monitoring Methods for Power Devices

Discussion and Improvement on the Calculation of the Relationship between the Base Emitter of the Bipolar Junction Transistor and the Temperature by Using MATLAB Software

Thermal Analysis of Power Semiconductor Device in Steady-State Conditions

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