2000
DOI: 10.1063/1.372783
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Dynamic hysteresis behavior in epitaxial spin-valve structures

Abstract: We report the dynamic hysteresis behavior of epitaxial single ferromagnetic fcc NiFe(001), fcc Co(001) layers, and fcc NiFe/Cu/Co(001) spin-valve structures investigated as a function of field sweep rate in the range of 0.01–270 kOe/s using the magneto-optic Kerr effect. The hysteresis loop area A is found to follow the scaling relation A∝Ḣα with α∼0.13 and ∼0.02 at low sweep rates and ∼0.70 and ∼0.30 at high sweep rates for 60 Å NiFe and 40 Å Co single magnetic layer structures, respectively. For the single a… Show more

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Cited by 13 publications
(8 citation statements)
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“…In the high dynamic regime, nucleation was considered to be the dominant reversal mechanism. The results of Lee et al for single Co and NiFe layers [48,49], and for Fe/GaAs(001) and Fe/InAs(001) [18,47], were qualitatively in good agreement with the experimental results and theoretical model of Raquet et al Hence the differing values of the exponent α between the two distinct regions were attributed to the change of reversal mechanism from domain wall motion to nucleation with increasing sweep rate. The main difference between the results of Lee et al and those of Raquet et al was that, instead of a sharp transition from the low to the high dynamic regime, a broad transition region over a small range of sweep rate (typically 10 kOe s −1 for Fe/GaAs(001) thin films) occurred.…”
Section: Experimental Backgroundsupporting
confidence: 79%
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“…In the high dynamic regime, nucleation was considered to be the dominant reversal mechanism. The results of Lee et al for single Co and NiFe layers [48,49], and for Fe/GaAs(001) and Fe/InAs(001) [18,47], were qualitatively in good agreement with the experimental results and theoretical model of Raquet et al Hence the differing values of the exponent α between the two distinct regions were attributed to the change of reversal mechanism from domain wall motion to nucleation with increasing sweep rate. The main difference between the results of Lee et al and those of Raquet et al was that, instead of a sharp transition from the low to the high dynamic regime, a broad transition region over a small range of sweep rate (typically 10 kOe s −1 for Fe/GaAs(001) thin films) occurred.…”
Section: Experimental Backgroundsupporting
confidence: 79%
“…Since the models do not consider domain wall coercivity-dominated magnetization reversal processes, it is not really surprising that they are not supported by these experiments. With the work of Raquet et al [17,51] and, in our group, Lee et al [18,[47][48][49], evidence was obtained relating to a phenomenon seen much earlier by Kryder and Humphrey [21]. The loop area scaling in epitaxial Fe/GaAs(001) and Fe/InAs(001) thin films [18,47], and in epitaxial single ferromagnetic NiFe and Co layers [48,49] was investigated.…”
Section: Experimental Backgroundmentioning
confidence: 83%
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